SCHEMBL47551

SCHEMBL47551

CCC(C)(C)C(=O)OC1CC2CC(C(=O)OCOCC34CC5CC(CC(C5)C3)C4)C1C2

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.35
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CA12 O43570 1/20 0.30
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA9 Q16790 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14984072 0.86 ALDH1A1 (0.33) ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL47441 0.86
SCHEMBL824259 0.86
SCHEMBL47555 0.85 ALDH1A1 (0.32) ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL15278111 0.85 ALDH1A1 (0.38) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL14984075 0.84 ALDH1A1 (0.36) ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL47444 0.83
SCHEMBL13361718 0.83 ALDH1A1 (0.35) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL19751282 0.82 ALDH1A1 (0.32) ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL47458 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 311 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-9494866-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-9411224-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-08-09 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9377685-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-06-28 US disclosed
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-9170487-B2 Resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-10-27 US disclosed
US-9134617-B2 Solvent developable negative resist composition, resist pattern formation method, and method for forming pattern of layer including block copolymer TOKYO OHKA KOGYO CO., LTD. (JP) 2015-09-15 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090004598-A1 Resist Composition And Method For Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-01 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080090171-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-17 US disclosed
US-20070231708-A1 Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2007-10-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 ALDH1A1 1184/4885MEN1 1473/4885KMT2A 4210/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 ALDH1A1 796/4885MEN1 1265/4885KMT2A 3621/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.