SCHEMBL476519

SCHEMBL476519

C[C@H](CCC(=O)O)[C@H]1CC[C@H]2[C@@H]3CCC4C[C@H](O)CC(C(C)(C)C)[C@]4(C)[C@H]3CC[C@]12C

nearest known ligand 0.73

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GPBAR1 Q8TDU6 7/20 0.73
VDR P11473 5/20 0.73
CASP7 P55210 3/20 0.73
HSD17B10 Q99714 3/20 0.73
TDP1 Q9NUW8 3/20 0.73
EPHA2 P29317 3/20 0.73
TP53 P04637 2/20 0.73
MAPK1 P28482 2/20 0.73
BLM P54132 2/20 0.73
NR1H4 Q96RI1 2/20 0.73
AKR1B10 O60218 2/20 0.73
AKR1B1 P15121 2/20 0.73
LMNA P02545 2/20 0.73
USP2 O75604 2/20 0.73
MDM4 O15151 1/20 0.73
CYP3A4 P08684 1/20 0.73
MAPT P10636 1/20 0.73
HSPD1 P10809 1/20 0.73
TSHR P16473 1/20 0.73
PTPN2 P17706 1/20 0.73

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL476518 1.00 GPBAR1 (0.73) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL235607 0.89 GPBAR1 (0.77) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL235606 0.89 GPBAR1 (0.77) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL26670009 0.89 GPBAR1 (0.77) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL1697153 0.88 GPBAR1 (0.76) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL1697152 0.88 GPBAR1 (0.76) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL4281815 0.87 GPBAR1 (0.69) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL8037712 0.87 OSBP (0.58) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL5577556 0.86 GPBAR1 (0.73) GPBAR1VDRCASP7HSD17B10TDP1
SCHEMBL5577551 0.86 GPBAR1 (0.73) GPBAR1VDRCASP7HSD17B10TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115685678-A Star-shaped molecular glass film forming resin and photoresist and preparation method thereof 南通林格橡塑制品有限公司 2023-02-03 CN disclosed
WO-2021241246-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN JSR株式会社 2021-12-02 WO disclosed
CN-113363141-A Photoresist composition and method for manufacturing semiconductor device 台湾积体电路制造股份有限公司 2021-09-07 CN disclosed
WO-2021140909-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2021-07-15 WO disclosed
WO-2021131845-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN JSR株式会社 2021-07-01 WO disclosed
WO-2021065350-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING SAME JSR株式会社 2021-04-08 WO disclosed
WO-2020241277-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND COMPOUND JSR株式会社 2020-12-03 WO disclosed
WO-2020195428-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2020-10-01 WO disclosed
WO-2020008994-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2020-01-09 WO disclosed
EP-2192134-B1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION, AND COMPOUND USED IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORP (JP) 2014-02-26 EP disclosed
EP-2194073-B1 Positive-working photosensitive composition, method for pattern formation using the composition, resin for use in the composition, and monomer. FUJIFILM CORP (JP) 2013-06-05 EP disclosed
EP-2034361-B1 Compound for use in a photosensitive composition FUJIFILM CORP (JP) 2012-02-01 EP disclosed
EP-2194073-A1 POSITIVE-WORKING PHOTOSENSITIVE COMPOSITION, METHOD FOR PATTERN FORMATION USING THE COMPOSITION, AND RESIN FOR USE IN THE COMPOSITION Fujifilm Corporation (JP) 2010-06-09 EP disclosed
EP-2034361-A2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition Fujifilm Corporation (JP) 2009-03-11 EP disclosed
EP-2003509-A2 Pattern forming method FUJIFILM Corporation (JP) 2008-12-17 EP disclosed
EP-1767992-A1 Positive resist composition for immersion exposure and pattern forming method using the same FUJIFILM Corporation (JP) 2007-03-28 EP disclosed
EP-1736824-A2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition Fuji Photo Film Co., Ltd. (JP) 2006-12-27 EP disclosed
EP-1688791-A2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition Fuji Photo Film Co., Ltd. (JP) 2006-08-09 EP disclosed
US-6258508-B1 PHOTORESISTS KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2001-07-10 US disclosed
US-6013413-A Alicyclic nortricyclene polymers and co-polymers CORNELL RESEARCH FOUNDATION, INC. (US) 2000-01-11 US disclosed