⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Potassium Ion SCHEMBL9463396 | 0.85 | — | — | |
| Water SCHEMBL28229832 | 0.81 | — | — | |
| Tetramethylammonium Ion SCHEMBL30957273 | 0.77 | CHRNB2 (0.33) | — | |
| Tetramethylammonium Ion SCHEMBL1760425 | 0.77 | CHRNB2 (0.33) | — | |
| Tetramethylammonium Ion SCHEMBL27588269 | 0.77 | CHRNB2 (0.33) | — | |
| Tetramethylammonium Ion SCHEMBL27588270 | 0.77 | CHRNB2 (0.33) | — | |
| Tetramethylammonium Ion SCHEMBL136726 | 0.76 | CHRNB2 (0.40) | — | |
| Tetramethylammonium Ion SCHEMBL4007649 | 0.72 | CHRNB2 (0.36) | — | |
| SCHEMBL28053977 | 0.69 | — | — | |
| Tetramethylammonium Ion SCHEMBL4814095 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7332446-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | claimed |
| CN-1542071-A | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-11-03 | — | — | CN | claimed |
| US-20040188809-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-09-30 | — | — | US | claimed |
| US-7332446-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |
| CN-1542071-A | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-11-03 | — | — | CN | disclosed |
| US-20040188809-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-09-30 | — | — | US | disclosed |