Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CHRNB2 | P17787 | 1/20 | 0.36 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.36 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL136726 | 0.95 | CHRNB2 (0.40) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL27566911 | 0.80 | CHRNB2 (0.44) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL1760425 | 0.78 | CHRNB2 (0.33) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL30957273 | 0.78 | CHRNB2 (0.33) | CHRNB2CHRNA7CHRNA4 | |
| Hydrogen Sulfide SCHEMBL23466954 | 0.75 | — | — | |
| Tetramethylammonium Ion SCHEMBL27460675 | 0.75 | CHRNB2 (0.50) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL136727 | 0.75 | CHRNB2 (0.50) | CHRNB2CHRNA7CHRNA4 | |
| Water SCHEMBL27889415 | 0.75 | — | — | |
| Tetramethylammonium Ion SCHEMBL4809976 | 0.72 | — | — | |
| SCHEMBL6845203 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1891482-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-02-27 | — | — | EP | claimed |
| WO-2006133253-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | claimed |
| US-9422513-B2 | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2016-08-23 | — | — | US | disclosed |
| US-20150094248-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2015-04-02 | — | — | US | disclosed |
| US-8951948-B2 | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| US-7484679-B2 | Method of milling cerium compound by means of ball mill | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-02-03 | — | — | US | disclosed |
| US-20080242574-A1 | Stripping post etching residue from microelectronic devices without affecting underlying silicate materials and interconnect metals; fluoride containing compound in organic solvent | ADVANCED TECHNOLOGY MATERIALS, INC (US) | 2008-10-02 | — | — | US | disclosed |
| US-20080156908-A1 | Method of milling cerium compound by means of ball mill | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-07-03 | — | — | US | disclosed |
| EP-1891482-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-02-27 | — | — | EP | disclosed |
| WO-2006133253-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | disclosed |
| US-20050253001-A1 | Cerium compound milling method using ball mill | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2005-11-17 | — | — | US | disclosed |