SCHEMBL4810428

SCHEMBL4810428

O=C(O)CC(CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)F)OCCN1CCOCC1

nearest known ligand 0.37

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
GLA P06280 1/20 0.37
ALDH1A1 P00352 4/20 0.36
LIPG Q9Y5X9 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
HSD17B10 Q99714 1/20 0.33
ABHD6 Q9BV23 1/20 0.32
KDM4E B2RXH2 4/20 0.32
POLB P06746 1/20 0.32
TSHR P16473 2/20 0.32
ATM Q13315 1/20 0.32
CASR P41180 1/20 0.32
TP53 P04637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4808378 0.74 POLB (0.35) GLAMEN1KMT2AHSD17B10POLB
SCHEMBL15014711 0.70 ALDH1A1 (0.43) GLAALDH1A1KMT2AATM
SCHEMBL13264770 0.68 ATM (0.46) GLAALDH1A1MEN1KMT2AATM
SCHEMBL4810424 0.67 KDM4E (0.37) ALDH1A1MEN1KMT2AABHD6KDM4E
SCHEMBL13264769 0.67 ATM (0.45) GLAALDH1A1MEN1KMT2AATM
SCHEMBL4806264 0.66 USP2 (0.36) ALDH1A1ABHD6KDM4ETSHR
SCHEMBL13264774 0.65 GLA (0.44) GLAALDH1A1KMT2AHSD17B10POLB
SCHEMBL13264772 0.64 GLA (0.43) GLAALDH1A1KMT2AHSD17B10POLB
SCHEMBL13264777 0.64 GLA (0.43) GLAALDH1A1KMT2AHSD17B10POLB
SCHEMBL8267288 0.64 GLA (0.56) GLAALDH1A1MEN1KMT2AHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2602660-B1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHINETSU CHEMICAL CO (JP) 2019-03-20 EP disclosed
US-9158191-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-13 US disclosed
US-20130149493-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
EP-2602660-A1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-12 EP disclosed
US-7468236-B2 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-23 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed