Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | GLA | P06280 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4810428 | 0.74 | GLA (0.37) | POLBHSD17B10MEN1KMT2AGLA | |
| SCHEMBL499960 | 0.71 | POLB (0.40) | POLBMAPK1L3MBTL1NPSR1HSD17B10 | |
| SCHEMBL500329 | 0.70 | L3MBTL1 (0.42) | POLBMAPK1L3MBTL1NPSR1HSD17B10 | |
| SCHEMBL500356 | 0.70 | ALDH1A1 (0.44) | POLBMAPK1L3MBTL1NPSR1HSD17B10 | |
| SCHEMBL499880 | 0.68 | L3MBTL1 (0.43) | POLBMAPK1L3MBTL1NPSR1HSD17B10 | |
| SCHEMBL13985575 | 0.64 | ALDH1A1 (0.45) | MAPK1NPSR1HSD17B10MEN1KMT2A | |
| SCHEMBL24065904 | 0.64 | THRB (0.41) | — | |
| SCHEMBL29098818 | 0.64 | THRB (0.41) | — | |
| SCHEMBL13985576 | 0.63 | ALDH1A1 (0.44) | MAPK1NPSR1HSD17B10MEN1KMT2A | |
| SCHEMBL6214649 | 0.63 | HTT (0.38) | POLBMAPK1L3MBTL1NPSR1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2602660-B1 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHINETSU CHEMICAL CO (JP) | 2019-03-20 | — | — | EP | disclosed |
| US-9158191-B2 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-13 | — | — | US | disclosed |
| US-20130149493-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-13 | — | — | US | disclosed |
| EP-2602660-A1 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-06-12 | — | — | EP | disclosed |
| US-7468236-B2 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-23 | — | — | US | disclosed |
| US-20070087287-A1 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-04-19 | — | — | US | disclosed |