Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | SLC6A4 | P31645 | 5/20 | 0.32 |
| ▸ | SLC6A3 | Q01959 | 5/20 | 0.32 |
| ▸ | RIPK1 | Q13546 | 3/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14424154 | 0.82 | MEN1 (0.39) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL8246003 | 0.82 | MEN1 (0.39) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL8247132 | 0.82 | MEN1 (0.39) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL8067270 | 0.74 | KDM4E (0.44) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL3465697 | 0.74 | KDM4E (0.44) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL13795024 | 0.74 | KDM4E (0.44) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL3211316 | 0.74 | MEN1 (0.36) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL9376106 | 0.74 | KDM4E (0.44) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL3259183 | 0.74 | KDM4E (0.44) | MEN1KMT2ASLC6A4SLC6A3RIPK1 | |
| SCHEMBL4738730 | 0.74 | KDM4E (0.44) | MEN1KMT2ASLC6A4SLC6A3RIPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 172 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2202577-B1 | Chemically amplified positive resist composition and resist patterning process | SHINETSU CHEMICAL CO (JP) | 2014-08-27 | — | — | EP | claimed |
| US-20240134280-A1 | Polymer, Chemically Amplified Positive Resist Composition, Resist Patterning Process, And Mask Blank | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-04-25 | — | — | US | disclosed |
| US-20240118613-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-04-11 | — | — | US | disclosed |
| EP-4343433-A1 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, RESIST PATTERNING PROCESS, AND MASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-27 | — | — | EP | disclosed |
| CN-117736362-A | Polymer, chemically amplified positive resist composition, resist pattern forming method, and blank mask | 信越化学工业株式会社 | 2024-03-22 | — | — | CN | disclosed |
| EP-4336261-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-13 | — | — | EP | disclosed |
| CN-117666284-A | Chemically amplified positive resist composition and method for forming resist pattern | 信越化学工业株式会社 | 2024-03-08 | — | — | CN | disclosed |
| US-20230393461-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-07 | — | — | US | disclosed |
| US-20230393470-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-07 | — | — | US | disclosed |
| US-20230393465-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-07 | — | — | US | disclosed |
| US-7141351-B2 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-11-28 | — | — | US | disclosed |
| US-7141352-B2 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-11-28 | — | — | US | disclosed |
| US-20060228648-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-10-12 | — | — | US | disclosed |
| EP-1710230-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-10-11 | — | — | EP | disclosed |
| US-20050238993-A1 | Nitrogen-containing organic compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-27 | — | — | US | disclosed |
| US-20050106500-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-19 | — | — | US | disclosed |
| US-20050095533-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-05 | — | — | US | disclosed |
| US-20050008968-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-13 | — | — | US | disclosed |
| US-20040234884-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-25 | — | — | US | disclosed |
| US-20040234885-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-25 | — | — | US | disclosed |