SCHEMBL482478

SCHEMBL482478

[CH2]CCOC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.37
NPSR1 Q6W5P4 2/20 0.37
MEN1 O00255 2/20 0.37
HTT P42858 2/20 0.37
KMT2A Q03164 2/20 0.37
GRIN2D O15399 3/20 0.37
GRIN3B O60391 3/20 0.37
GRIN1 Q05586 3/20 0.37
GRIN2A Q12879 3/20 0.37
GRIN2B Q13224 3/20 0.37
GRIN2C Q14957 3/20 0.37
GRIN3A Q8TCU5 3/20 0.37
SMN1; SMN2 Q16637 5/20 0.36
TSHR P16473 3/20 0.36
LMNA P02545 6/20 0.35
KDM4E B2RXH2 1/20 0.35
CYP1A2 P05177 2/20 0.34
CYP2C9 P11712 2/20 0.34
CYP2C19 P33261 2/20 0.34
MAPK1 P28482 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL218805 0.80 ALDH1A1 (0.35) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL386960 0.80 NPSR1 (0.38) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL482480 0.78 ALDH1A1 (0.41) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL17159507 0.77 ALDH1A1 (0.33) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL4389248 0.76 ALDH1A1 (0.41) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL5933093 0.76 ALDH1A1 (0.47) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL5933278 0.76 ALDH1A1 (0.37) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL5933126 0.76 ALDH1A1 (0.37) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL5933271 0.76 ALDH1A1 (0.41) ALDH1A1NPSR1MEN1HTTKMT2A
SCHEMBL4389244 0.76 ALDH1A1 (0.41) ALDH1A1NPSR1MEN1HTTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2482132-B1 Resist pattern forming process SHINETSU CHEMICAL CO (JP) 2019-10-16 EP disclosed
US-20190002604-A1 HETERORING-CONTAINING SILOXANE POLYMER, COMPOSITION CONTAINING SAID POLYMER, AND ELECTRONIC ELEMENT DAINIPPON INK & CHEMICALS (JP) 2019-01-03 US disclosed
US-20180223181-A1 SILOXANE MONOMER, POLYMER THEREOF, COMPOSITION CONTAINING SAID POLYMER, AND ELECTRONIC ELEMENT DAINIPPON INK & CHEMICALS (JP) 2018-08-09 US disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
US-9057949-B2 Patterning process, resist composition, polymer, and polymerizable ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-16 US disclosed
EP-2239631-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-02-25 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-8592133-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-26 US disclosed
US-8586282-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-19 US disclosed
US-7141351-B2 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-11-28 US disclosed
US-7141352-B2 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-11-28 US disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed
US-20050238993-A1 Nitrogen-containing organic compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-27 US disclosed
US-20050106500-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 US disclosed
US-20050095533-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-05 US disclosed
US-20050008968-A1 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-13 US disclosed
US-20040234884-A1 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-25 US disclosed
US-20040234885-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180223181-A1 SILOXANE MONOMER, POLYMER THEREOF, COMPOSITION CONTAINING SAID POLYMER, AND ELECTRONIC ELEMENT ILK, LIMA1, EED ALDH1A1 2951/4885NPSR1 4542/4885MEN1 1017/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.