SCHEMBL482707

SCHEMBL482707

C=C(C)C(=O)OC.CC(=CC=Cc1ccc(O)cc1)C(=O)O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 2/20 0.44
CA1 P00915 2/20 0.44
CA2 P00918 2/20 0.44
TYR P14679 2/20 0.44
CA7 P43166 2/20 0.44
CA9 Q16790 2/20 0.44
CA14 Q9ULX7 2/20 0.44
LMNA P02545 2/20 0.41
ALDH1A1 P00352 3/20 0.41
STAT3 P40763 1/20 0.40
MMP2 P08253 2/20 0.40
MMP9 P14780 2/20 0.40
MMP13 P45452 1/20 0.40
APP P05067 2/20 0.39
MAPT P10636 3/20 0.39
KDM4E B2RXH2 1/20 0.39
AKR1B1 P15121 3/20 0.38
AKR1B10 O60218 2/20 0.38
ESR1 P03372 1/20 0.38
CA3 P07451 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2032564 0.89 LMNA (0.52) LMNAALDH1A1KDM4ERAB9A
SCHEMBL481831 0.85 APP (0.52) CA12CA1CA2TYRCA7
SCHEMBL2708790 0.85 ABCG2 (0.49) CA12CA1CA2TYRCA7
SCHEMBL8043549 0.84 TYR (0.53) CA12CA1CA2TYRCA7
SCHEMBL3700257 0.83 LMNA (0.50) CA12CA1CA2TYRCA7
SCHEMBL3469080 0.83 LMNA (0.53) LMNAALDH1A1KDM4EMEN1KMT2A
SCHEMBL482027 0.82 TYR (0.50) CA12CA1CA2TYRCA7
SCHEMBL8138457 0.81 ALDH1A1 (0.56) LMNAALDH1A1MAPTKDM4ERAB9A
SCHEMBL2707312 0.81 LMNA (0.50) CA12CA1CA2TYRCA7
SCHEMBL11523182 0.78 LMNA (0.50) LMNAALDH1A1KDM4ERAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-1099983-B1 Chemically amplified positive resist composition and patterning method SHINETSU CHEMICAL CO (JP) 2014-08-06 EP disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-8541158-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-24 US disclosed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8343694-B2 Photomask blank, resist pattern forming process, and photomask preparation process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-01 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-20020076643-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-06-20 US disclosed
US-20020077493-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-06-20 US disclosed
US-6395446-B1 CONTAINING SULFONYLDIAZOMETHANE COMPOUND AS ACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-28 US disclosed
US-6338931-B1 PHOTOACID GENERATOR OF SULFONYLDIAZOMETHANE COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-15 US disclosed
US-20010038971-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-08 US disclosed
US-20010035394-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-01 US disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed
EP-1099983-A1 Chemically amplified positive resist composition and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2001-05-16 EP disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020077493-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process ABL1, PI4K2B, FES CA12 4002/4885CA1 3582/4885CA2 2105/4885
US-20020076643-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process PNN, PI4K2B, PI4K2A CA12 4301/4885CA1 4203/4885CA2 2859/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.