⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4392373 | 0.89 | — | — | |
| SCHEMBL17557778 | 0.89 | — | — | |
| SCHEMBL15213 | 0.87 | — | — | |
| SCHEMBL28808845 | 0.82 | — | — | |
| SCHEMBL28964906 | 0.82 | — | — | |
| SCHEMBL29278697 | 0.82 | — | — | |
| SCHEMBL17289525 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL25368540 | 0.75 | — | — | |
| SCHEMBL562096 | 0.75 | — | — | |
| SCHEMBL36654 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 67 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240145563-A1 | SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICE | SK Hynix Inc. (KR) | 2024-05-02 | — | — | US | claimed |
| CN-117637751-A | Semiconductor device and method for manufacturing the same | 爱思开海力士有限公司 | 2024-03-01 | — | — | CN | claimed |
| US-20230253210-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYER | NANYA TECHNOLOGY CORPORATION (TW) | 2023-08-10 | — | — | US | claimed |
| WO-2006060054-A1 | HYBRID SEMICONDUCTOR-ON-INSULATOR AND FIN-FIELD-EFFECT TRANSISTOR STRUCTURES AND RELATED METHODS | AMBERWAVE SYSTEMS CORPORATION (US) | 2006-06-08 | — | — | WO | claimed |
| US-20060113603-A1 | Hybrid semiconductor-on-insulator structures and related methods | AMBERWAVE SYSTEMS CORPORATION (US) | 2006-06-01 | — | — | US | claimed |
| US-6709989-B2 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2004-03-23 | — | — | US | claimed |
| US-20020197881-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2002-12-26 | — | — | US | claimed |
| US-20020146895-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2002-10-10 | — | — | US | claimed |
| EP-1096042-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. (US) | 2001-05-02 | — | — | EP | claimed |
| US-12641872-B2 | Semiconductor device and a method of manufacturing the semiconductor device | SK Hynix Inc. (KR) | 2026-05-26 | — | — | US | disclosed |
| US-20260040607-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| CN-113410290-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-12-27 | — | — | CN | disclosed |
| US-12112950-B2 | Semiconductor device with protection layer and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2024-10-08 | — | — | US | disclosed |
| CN-112768448-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-05-28 | — | — | CN | disclosed |
| US-20060113605-A1 | Hybrid fin field-effect transistor structures and related methods | AMBERWAVE SYSTEMS CORPORATION (US) | 2006-06-01 | — | — | US | disclosed |
| US-20060113603-A1 | Hybrid semiconductor-on-insulator structures and related methods | AMBERWAVE SYSTEMS CORPORATION (US) | 2006-06-01 | — | — | US | disclosed |
| US-6709989-B2 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2004-03-23 | — | — | US | disclosed |
| US-20020197881-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2002-12-26 | — | — | US | disclosed |
| US-20020146895-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2002-10-10 | — | — | US | disclosed |
| EP-1096042-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. (US) | 2001-05-02 | — | — | EP | disclosed |