SCHEMBL4863407

SCHEMBL4863407

CC(c1ccccc1)C(O)(O)c1ccccc1.Cc1ccc(O)c(C)c1C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 2/20 0.39
ATM Q13315 1/20 0.39
ESR1 P03372 2/20 0.38
ESR2 Q92731 1/20 0.38
PTGS1 P23219 2/20 0.35
CACNA1C Q13936 2/20 0.35
PTPN5 P54829 1/20 0.33
SCN5A Q14524 2/20 0.32
ALDH1A1 P00352 2/20 0.31
GAA P10253 2/20 0.31
HTT P42858 1/20 0.31
CYP19A1 P11511 1/20 0.31
TYR P14679 1/20 0.31
CYP2D6 P10635 1/20 0.31
CYP2C19 P33261 1/20 0.31
HSD17B10 Q99714 1/20 0.31
HPGD P15428 1/20 0.31
TSHR P16473 1/20 0.31
LMNA P02545 1/20 0.30
CHRM2 P08172 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4489962 0.82 CYP2D6 (0.41) ALDH1A1CYP2D6CYP2C19HSD17B10TSHR
SCHEMBL4863409 0.81 TRPA1 (0.44) TRPA1ATMESR1ESR2PTGS1
SCHEMBL27995296 0.77 ESR2 (0.50) ESR1ESR2PTGS1ALDH1A1GAA
SCHEMBL27384900 0.72 TRPA1 (0.40) TRPA1ALDH1A1CYP2D6CYP2C19HSD17B10
SCHEMBL28708717 0.70 KMT2A (0.45) CYP2D6CYP2C19TSHRLMNACHRM2
SCHEMBL207038 0.70 TRPA1 (0.57) TRPA1ATMESR1ESR2PTGS1
SCHEMBL30388902 0.70 TRPA1 (0.57) TRPA1ATMESR1ESR2PTGS1
SCHEMBL27599098 0.69 TRPA1 (0.37) TRPA1ALDH1A1CYP2D6CYP2C19HSD17B10
SCHEMBL7775093 0.68 TRPA1 (0.81) TRPA1ATMESR1ESR2ALDH1A1
Phosphine SCHEMBL1067227 0.68 TRPA1 (0.55) TRPA1ATMESR1ESR2PTGS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7419763-B2 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2008-09-02 US disclosed
US-7303859-B2 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2007-12-04 US disclosed
US-20070141483-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2007-06-21 US disclosed
US-20060263722-A1 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2006-11-23 US disclosed
US-20060078818-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2006-04-13 US disclosed
US-7022463-B2 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2006-04-04 US disclosed
US-20050079437-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2005-04-14 US disclosed
US-20050053859-A1 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2005-03-10 US disclosed
US-6849391-B2 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2005-02-01 US disclosed
US-20030003393-A1 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KASIHA (JP) 2003-01-02 US disclosed