SCHEMBL4863409

SCHEMBL4863409

CC(O)C(O)(c1ccccc1)c1ccccc1.Cc1ccc(O)c(C)c1C

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 2/20 0.44
ATM Q13315 1/20 0.44
ESR1 P03372 4/20 0.42
ESR2 Q92731 3/20 0.42
ALDH1A1 P00352 3/20 0.41
CYP2D6 P10635 2/20 0.41
CYP2C19 P33261 1/20 0.41
HSD17B10 Q99714 1/20 0.41
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
TTR P02766 1/20 0.37
KCNA5 P22460 1/20 0.36
SCN5A Q14524 1/20 0.35
KCNN4 O15554 1/20 0.34
KDM4E B2RXH2 2/20 0.34
LMNA P02545 2/20 0.34
MAPK1 P28482 1/20 0.34
GAA P10253 1/20 0.34
HTT P42858 1/20 0.34
CYP19A1 P11511 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4863407 0.81 TRPA1 (0.39) TRPA1ATMESR1ESR2ALDH1A1
SCHEMBL301345 0.79 ALDH1A1 (0.57) ESR1ESR2ALDH1A1CYP2D6CYP2C19
SCHEMBL6021075 0.79 ALDH1A1 (0.57) ESR1ESR2ALDH1A1CYP2D6CYP2C19
SCHEMBL30388902 0.74 TRPA1 (0.57) TRPA1ATMESR1ESR2ALDH1A1
SCHEMBL207038 0.74 TRPA1 (0.57) TRPA1ATMESR1ESR2ALDH1A1
SCHEMBL7775093 0.73 TRPA1 (0.81) TRPA1ATMESR1ESR2ALDH1A1
Ammonia Solution, Strong SCHEMBL1065150 0.72 TRPA1 (0.55) TRPA1ATMESR1ESR2ALDH1A1
Ammonia Solution, Strong SCHEMBL28109578 0.72 TRPA1 (0.55) TRPA1ATMESR1ESR2ALDH1A1
Phosphine SCHEMBL1067227 0.72 TRPA1 (0.55) TRPA1ATMESR1ESR2ALDH1A1
Methane SCHEMBL27481984 0.72 TRPA1 (0.55) TRPA1ATMESR1ESR2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7419763-B2 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2008-09-02 US disclosed
US-7303859-B2 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2007-12-04 US disclosed
US-20070141483-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2007-06-21 US disclosed
US-20060263722-A1 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2006-11-23 US disclosed
US-20060078818-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2006-04-13 US disclosed
US-7022463-B2 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2006-04-04 US disclosed
US-20050079437-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2005-04-14 US disclosed
US-20050053859-A1 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2005-03-10 US disclosed
US-6849391-B2 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KAISHA (JP) 2005-02-01 US disclosed
US-20030003393-A1 Photoresist, photolithography method using the same, and method for producing photoresist CANON KABUSHIKI KASIHA (JP) 2003-01-02 US disclosed