Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.44 |
| ▸ | MEN1 | O00255 | 2/20 | 0.44 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.44 |
| ▸ | THRB | P10828 | 1/20 | 0.44 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | GGT1 | P19440 | 1/20 | 0.39 |
| ▸ | GRM2 | Q14416 | 2/20 | 0.39 |
| ▸ | GRM3 | Q14832 | 1/20 | 0.39 |
| ▸ | ARG1 | P05089 | 2/20 | 0.38 |
| ▸ | ARG2 | P78540 | 2/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.38 |
| ▸ | FFAR3 | O14843 | 1/20 | 0.35 |
| ▸ | BLM | P54132 | 1/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | GRM4 | Q14833 | 1/20 | 0.33 |
| ▸ | HMGCR | P04035 | 1/20 | 0.33 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bicarbonate SCHEMBL8038848 | 0.88 | ALDH1A1 (0.42) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Bicarbonate SCHEMBL8042430 | 0.88 | ALDH1A1 (0.42) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Pivalate SCHEMBL4916743 | 0.86 | ALDH1A1 (0.43) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Acetic Acid SCHEMBL699536 | 0.85 | FFAR3 (0.44) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Carbamic Acid SCHEMBL21058277 | 0.85 | ACHE (0.44) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Oxalic Acid SCHEMBL10594364 | 0.85 | ALDH1A1 (0.41) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Trifluoroacetic Acid SCHEMBL3424222 | 0.83 | ALDH1A1 (0.41) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| SCHEMBL4920293 | 0.83 | ALDH1A1 (0.41) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Acetic Acid SCHEMBL10949299 | 0.82 | FFAR3 (0.41) | ALDH1A1MEN1CYP1A2KMT2ATHRB | |
| Propionic Acid SCHEMBL5571646 | 0.82 | FFAR3 (0.59) | ALDH1A1MEN1CYP1A2KMT2ATHRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20080312351-A1 | Tetraalkylammonium Carboxylate Salts as Trimerization Catalysts for Spray Foam Applications | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-12-18 | — | — | US | claimed |
| EP-2003157-A2 | Tetraalkylammonium carboxylate salts as trimerization catalysts for spray foam applications | Air Products and Chemicals, Inc. (US) | 2008-12-17 | — | — | EP | claimed |
| US-20080312351-A1 | Tetraalkylammonium Carboxylate Salts as Trimerization Catalysts for Spray Foam Applications | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-12-18 | — | — | US | disclosed |
| EP-2003157-A2 | Tetraalkylammonium carboxylate salts as trimerization catalysts for spray foam applications | Air Products and Chemicals, Inc. (US) | 2008-12-17 | — | — | EP | disclosed |
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |