⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL167535 | 0.87 | — | — | |
| SCHEMBL6684600 | 0.78 | — | — | |
| SCHEMBL1206900 | 0.72 | GRM2 (0.30) | — | |
| SCHEMBL4933851 | 0.71 | — | — | |
| SCHEMBL167533 | 0.70 | — | — | |
| SCHEMBL565428 | 0.67 | — | — | |
| SCHEMBL14859876 | 0.65 | HSD11B1 (0.30) | — | |
| SCHEMBL14860278 | 0.64 | — | — | |
| SCHEMBL3173540 | 0.64 | SLC6A4 (0.32) | — | |
| SCHEMBL167534 | 0.63 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20080153300-A1 | Method for forming fine pattern of semiconductor device | HYNIX SEMICONDUCTOR INC. | 2008-06-26 | — | — | US | claimed |
| US-6916594-B2 | Overcoating composition for photoresist and method for forming photoresist pattern using the same | HYNIX SEMICONDUCTOR INC. (KR) | 2005-07-12 | — | — | US | claimed |
| US-20040142279-A1 | Overcoating composition for photoresist and method for forming photoresist pattern using the same | HYNIX SEMICONDUCTOR INC. (KR) | 2004-07-22 | — | — | US | claimed |
| US-6737217-B2 | SUCH AS POLY(MALEIC ANHYDRIDE/HEXAFLUOROBUTYL-5-NORBORNENE-2-CARBOXYLATE/2,6-DIFLUORO-1 -METHYLBENZYLACRYLATE) ; FOR PRODUCTION OF SEMICONDUCTORS/INTEGRATED CIRCUITS; PHOTOLITHOGRAPHY | HYNIX SEMICONDUCTOR INC. (KR) | 2004-05-18 | — | — | US | claimed |
| US-20030022103-A1 | Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same | HYNIX SEMICONDUCTOR INC. (KR) | 2003-01-30 | — | — | US | claimed |
| US-20080153300-A1 | Method for forming fine pattern of semiconductor device | HYNIX SEMICONDUCTOR INC. | 2008-06-26 | — | — | US | disclosed |
| US-6916594-B2 | Overcoating composition for photoresist and method for forming photoresist pattern using the same | HYNIX SEMICONDUCTOR INC. (KR) | 2005-07-12 | — | — | US | disclosed |
| US-20040142279-A1 | Overcoating composition for photoresist and method for forming photoresist pattern using the same | HYNIX SEMICONDUCTOR INC. (KR) | 2004-07-22 | — | — | US | disclosed |
| US-6737217-B2 | SUCH AS POLY(MALEIC ANHYDRIDE/HEXAFLUOROBUTYL-5-NORBORNENE-2-CARBOXYLATE/2,6-DIFLUORO-1 -METHYLBENZYLACRYLATE) ; FOR PRODUCTION OF SEMICONDUCTORS/INTEGRATED CIRCUITS; PHOTOLITHOGRAPHY | HYNIX SEMICONDUCTOR INC. (KR) | 2004-05-18 | — | — | US | disclosed |
| US-6653047-B2 | Monomers such as 2,6-difluoro-1-methylbenzyl 5-norbornene-2-carboxylate; etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide; semiconductors | HYNIX SEMICONDUCTOR INC (KR) | 2003-11-25 | — | — | US | disclosed |
| US-20030022103-A1 | Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same | HYNIX SEMICONDUCTOR INC. (KR) | 2003-01-30 | — | — | US | disclosed |
| US-20030017412-A1 | Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same | HYNIX SEMICONDUCTOR INC. (KR) | 2003-01-23 | — | — | US | disclosed |