SCHEMBL565428

SCHEMBL565428

CC(C)(C12CC3CC(CC(C3)C1)C2)C12C=CC(CC1C(=O)O)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1206900 0.83 GRM2 (0.30)
SCHEMBL6684600 0.76
SCHEMBL4933851 0.75
SCHEMBL14859876 0.74 HSD11B1 (0.30)
SCHEMBL167533 0.74
SCHEMBL14860278 0.73
SCHEMBL14142587 0.71
SCHEMBL2477125 0.68
SCHEMBL1518812 0.67 APLNR (0.34)
SCHEMBL4933857 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11556056-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-17 US disclosed
US-10795258-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-10-06 US disclosed
US-10774029-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-15 US disclosed
US-10725380-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-07-28 US disclosed
US-10599033-B2 Salt, acid generator, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-03-24 US disclosed
US-10571805-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-02-25 US disclosed
US-20190025698-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-01-24 US disclosed
US-10126650-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-11-13 US disclosed
US-10073343-B2 Non-ionic compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-09-11 US disclosed
US-9996002-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-06-12 US disclosed
US-20120156620-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-06-21 US disclosed
US-20120100482-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120100483-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120070778-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-22 US disclosed
US-20120052443-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
EP-1078945-B1 Polymer for use in a photoresist composition SAMSUNG ELECTRONICS CO LTD (KR) 2011-10-12 EP disclosed
US-6642336-B1 Ultraviolet radiation transparent; improved adhesion, contrast and dry etch resistance SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-11-04 US disclosed
US-6596459-B1 Photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-07-22 US disclosed
EP-1078945-A2 Polymer for use in a photoresist composition SAMSUNG ELECTRONICS CO. LTD. (KR) 2001-02-28 EP disclosed