SCHEMBL17797138

SCHEMBL17797138

CO[Si](OC)(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL724457 0.67
SCHEMBL495810 0.67
SCHEMBL10944574 0.64
SCHEMBL9463582 0.64
SCHEMBL1585526 0.64
SCHEMBL1103757 0.58
Trimethylammonium SCHEMBL27481582 0.58
SCHEMBL1013364 0.55
SCHEMBL49474 0.55
Trimethylammonium SCHEMBL28164962 0.55

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4747425-A1 INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE GELEST, INC. (US) 2026-05-27 EP claimed
CN-122071548-A Impact-resistant polypropylene and preparation method thereof 中国石油化工股份有限公司 2026-05-22 CN claimed
US-20250320604-A1 LOW TEMPERATURE PLASMA DEPOSITION OF SILICON-CONTAINING FILMS USING HYDROGEN PEROXIDE GELEST INC (US) 2025-10-16 US claimed
US-20250305131-A1 LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE GELEST, INC. 2025-10-02 US claimed
US-20250112041-A1 INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE GELEST, INC. 2025-04-03 US claimed
WO-2025019704-A1 INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE GELEST, INC. (US) 2025-01-23 WO claimed
CN-107299307-B Polishing liquid composition 奎克化学(中国)有限公司 2020-08-28 CN claimed
EP-4747425-A1 INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE GELEST, INC. (US) 2026-05-27 EP disclosed
CN-122071548-A Impact-resistant polypropylene and preparation method thereof 中国石油化工股份有限公司 2026-05-22 CN disclosed
US-20250320604-A1 LOW TEMPERATURE PLASMA DEPOSITION OF SILICON-CONTAINING FILMS USING HYDROGEN PEROXIDE GELEST INC (US) 2025-10-16 US disclosed
US-20250305131-A1 LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE GELEST, INC. 2025-10-02 US disclosed
US-20250250667-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2025-08-07 US disclosed
US-20250232975-A1 METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2025-07-17 US disclosed
US-20230386947-A1 SEMICONDUCTOR DEVICE AND METHOD TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2023-11-30 US disclosed
US-20210249318-A1 Semiconductor Device and Method TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2021-08-12 US disclosed
US-10991636-B2 Semiconductor device and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2021-04-27 US disclosed
CN-107299307-B Polishing liquid composition 奎克化学(中国)有限公司 2020-08-28 CN disclosed
US-20190348337-A1 Semiconductor Device and Method TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2019-11-14 US disclosed
US-9388132-B2 Isobaric tandem mass tags for quantitative proteomics and peptidomics WISCONSIN ALUMNI RESEARCH FOUNDATION (US) 2016-07-12 US disclosed
EP-3029175-A1 Process for the production of porous thin films BASF SE (DE) 2016-06-08 EP disclosed