SCHEMBL498596

SCHEMBL498596

CCOc1ccccc1S([O])(=O)=O

nearest known ligand 0.48

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.48
L3MBTL1 Q9Y468 3/20 0.47
MAPT P10636 1/20 0.47
NPSR1 Q6W5P4 1/20 0.47
GLA P06280 1/20 0.47
HSD17B10 Q99714 2/20 0.45
CA12 O43570 2/20 0.45
CA1 P00915 2/20 0.45
CA2 P00918 2/20 0.45
CA9 Q16790 2/20 0.45
CA14 Q9ULX7 1/20 0.45
PTGES2 Q9H7Z7 1/20 0.43
PTPRC P08575 1/20 0.42
GAA P10253 1/20 0.42
HCRTR1 O43613 1/20 0.42
HTT P42858 2/20 0.42
MCOLN3 Q8TDD5 1/20 0.41
LMNA P02545 1/20 0.41
TSHR P16473 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7108847 0.86 ALDH1A1 (0.50) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL498544 0.85 MEN1 (0.43) ALDH1A1L3MBTL1MAPTNPSR1CA12
SCHEMBL12125057 0.84 ALDH1A1 (0.48) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL9114761 0.84 ALDH1A1 (0.48) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL1896177 0.83 CYP1A2 (0.53) ALDH1A1L3MBTL1MAPTNPSR1CA12
SCHEMBL8726763 0.82 TRPV4 (0.55) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL6722281 0.82 ALDH1A1 (0.47) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL31511099 0.82 TRPV4 (0.55) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL419398 0.82 HSD17B10 (0.54) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL29469832 0.82 CA1 (0.60) ALDH1A1L3MBTL1MAPTNPSR1GLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111694215-B Photoresist composition and method for forming photolithographic pattern 常州强力先端电子材料有限公司 2022-04-19 CN disclosed
CN-111694215-A Photoresist composition and method for forming photolithographic pattern 常州强力先端电子材料有限公司 2020-09-22 CN disclosed
US-8105763-B2 Method of forming plated product using negative photoresist composition and photosensitive composition used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-31 US disclosed
US-7879525-B2 A photoresist comprising a resin that undergoes a change in alkali solubility by an acid, an acid generating compound and a corrosion inhibitor, e.g. trimercapto-1,3,5-triazine; stabiliity prior to development; used in the manufacturing of connection terminals during the mounting of semiconductors TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US disclosed
EP-2202579-A2 Chemically amplified photoresist composition, photoresist laminated product, manufacturing method for photoresist composition, manufacturing method for photoresist pattern, and manufacturing method for connection element Tokyo Ohka Kogyo Co., Ltd. (JP) 2010-06-30 EP disclosed
US-20080032242-A1 Method of Forming Plated Product Using Negative Photoresist Composition and Photosensitive Composition Used Therein TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-07 US disclosed
US-20070275320-A1 Chemically Amplified Photorestist Composition, Laminated Product, and Connection Element HITACHI CONSTRUCTION MACHINERY CO., LTD. (JP) 2007-11-29 US disclosed
EP-1818722-A1 CHEMICAL AMPLIFICATION PHOTORESIST COMPOSITION, PHOTORESIST LAYER LAMINATE, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST PATTERN AND METHOD FOR PRODUCING CONNECTING TERMINAL TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-15 EP disclosed
EP-1761823-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-14 EP disclosed
WO-2006003757-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-12 WO disclosed
US-6838229-B2 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-04 US disclosed
EP-1329160-A2 4-ACYLAMINOPYRAZOLE DERIVATIVES Sankyo Company, Limited (JP) 2003-07-23 EP disclosed
US-20030039921-A1 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. 2003-02-27 US disclosed
US-5955241-A Chemical-amplification-type negative resist composition and method for forming negative resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-21 US disclosed