SCHEMBL498544

SCHEMBL498544

CCCOc1ccccc1S([O])(=O)=O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 6/20 0.43
KMT2A Q03164 6/20 0.43
HTR2B P41595 2/20 0.42
HTR2C P28335 1/20 0.42
CYP1A2 P05177 1/20 0.42
CYP2C9 P11712 1/20 0.42
CYP2C19 P33261 1/20 0.42
NPC1 O15118 1/20 0.41
RAB9A P51151 1/20 0.41
MAPT P10636 3/20 0.41
NPSR1 Q6W5P4 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
CYP2A6 P11509 1/20 0.41
CA12 O43570 1/20 0.40
CA1 P00915 1/20 0.40
CA2 P00918 1/20 0.40
CA7 P43166 1/20 0.40
CA9 Q16790 1/20 0.40
LMNA P02545 2/20 0.39
GAA P10253 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1896177 0.91 CYP1A2 (0.53) MEN1KMT2AHTR2BCYP1A2CYP2C9
SCHEMBL17861662 0.85 CASR (0.43) MEN1KMT2AHTR2BHTR2CCYP1A2
SCHEMBL498596 0.85 ALDH1A1 (0.48) MAPTNPSR1L3MBTL1CA12CA1
SCHEMBL7356282 0.84 NPC1 (0.43) MEN1KMT2AHTR2BHTR2CCYP1A2
SCHEMBL1649916 0.84 CA1 (0.50) MEN1KMT2AHTR2BHTR2CCYP1A2
SCHEMBL419405 0.84 MEN1 (0.43) MEN1KMT2AHTR2BHTR2CCYP1A2
SCHEMBL29469878 0.84 CA1 (0.50) MEN1KMT2AHTR2BHTR2CCYP1A2
SCHEMBL13588832 0.81 MEN1 (0.40) MEN1KMT2AHTR2BHTR2CCYP1A2
SCHEMBL8747424 0.81 HTR6 (0.62) MEN1KMT2AHTR2BHTR2CCA12
1,2-Dipropoxybenzene SCHEMBL578657 0.77 CYP1A2 (0.56) MEN1KMT2AHTR2BHTR2CCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111694215-B Photoresist composition and method for forming photolithographic pattern 常州强力先端电子材料有限公司 2022-04-19 CN disclosed
CN-111694215-A Photoresist composition and method for forming photolithographic pattern 常州强力先端电子材料有限公司 2020-09-22 CN disclosed
US-8105763-B2 Method of forming plated product using negative photoresist composition and photosensitive composition used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-31 US disclosed
US-7879525-B2 A photoresist comprising a resin that undergoes a change in alkali solubility by an acid, an acid generating compound and a corrosion inhibitor, e.g. trimercapto-1,3,5-triazine; stabiliity prior to development; used in the manufacturing of connection terminals during the mounting of semiconductors TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US disclosed
EP-2202579-A2 Chemically amplified photoresist composition, photoresist laminated product, manufacturing method for photoresist composition, manufacturing method for photoresist pattern, and manufacturing method for connection element Tokyo Ohka Kogyo Co., Ltd. (JP) 2010-06-30 EP disclosed
US-20080032242-A1 Method of Forming Plated Product Using Negative Photoresist Composition and Photosensitive Composition Used Therein TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-07 US disclosed
US-20070275320-A1 Chemically Amplified Photorestist Composition, Laminated Product, and Connection Element HITACHI CONSTRUCTION MACHINERY CO., LTD. (JP) 2007-11-29 US disclosed
EP-1818722-A1 CHEMICAL AMPLIFICATION PHOTORESIST COMPOSITION, PHOTORESIST LAYER LAMINATE, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST PATTERN AND METHOD FOR PRODUCING CONNECTING TERMINAL TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-15 EP disclosed
EP-1761823-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-14 EP disclosed
WO-2006003757-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-12 WO disclosed
US-6838229-B2 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-04 US disclosed
US-20030039921-A1 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. 2003-02-27 US disclosed
US-5955241-A Chemical-amplification-type negative resist composition and method for forming negative resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-21 US disclosed