SCHEMBL499044

SCHEMBL499044

CCOc1cc(C=Cc2nc(C(Cl)(Cl)Cl)nc(C(Cl)(Cl)Cl)n2)cc(OC)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 4/20 0.54
AHR P35869 3/20 0.54
CYP1A1 P04798 5/20 0.45
CYP1B1 Q16678 5/20 0.45
ABL1 P00519 4/20 0.44
BCR P11274 4/20 0.44
ABCB1 P08183 3/20 0.44
CYP1A2 P05177 3/20 0.41
TUBB4A P04350 2/20 0.41
TUBB P07437 2/20 0.41
TUBA3C P0DPH7 2/20 0.41
TUBA1B P68363 2/20 0.41
TUBA4A P68366 2/20 0.41
TUBB4B P68371 2/20 0.41
TUBB3 Q13509 2/20 0.41
TUBB2A Q13885 2/20 0.41
TUBB8 Q3ZCM7 2/20 0.41
TUBA3E Q6PEY2 2/20 0.41
TUBA1A Q71U36 2/20 0.41
TUBA1C Q9BQE3 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL499043 1.00 ESR1 (0.54) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL29447154 1.00 ESR1 (0.54) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL499099 0.95 ESR1 (0.44) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL499098 0.95 ESR1 (0.44) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL498564 0.90 CYP1A1 (0.55) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL498565 0.90 CYP1A1 (0.55) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL29447162 0.90 AHR (0.49) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL499390 0.90 AHR (0.49) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL499391 0.90 AHR (0.49) ESR1AHRCYP1A1CYP1B1ABL1
SCHEMBL5185731 0.89 ESR1 (0.50) ESR1AHRCYP1A1CYP1B1ABL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 157 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9244354-B2 Method for producing thick film photoresist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US claimed
EP-4667537-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-12-24 EP disclosed
US-20250382500-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO LTD (JP) 2025-12-18 US disclosed
US-20250271751-A1 PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE FILM, LOWER LAYER FILM, METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2025-08-28 US disclosed
US-20250189895-A1 METHOD OF MANUFACTURING PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-06-12 US disclosed
US-20250172872-A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE COMPOSITION, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, AND METHOD OF MANUFACTURING PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-05-29 US disclosed
EP-3961676-B1 ETCHING METHOD AND PHOTOSENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2025-01-22 EP disclosed
US-20240053680-A1 PHOTOSENSITIVE DRY FILM, LAMINATED FILM, METHOD FOR PRODUCING LAMINATED FILM, AND METHOD FOR PRODUCING PATTERNED RESIST FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-15 US disclosed
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20060035170-A1 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same SAITO KOJI 2006-02-16 US disclosed
WO-2006003757-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-12 WO disclosed
US-20060003260-A1 Chemical amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-05 US disclosed
US-20050244740-A1 Chemically amplified positive photo resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2005-11-03 US disclosed
US-20050236967-A1 Resist composition for separator formation, separator of EL display device and EL display device TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-27 US disclosed
US-20050130055-A1 Method and removing resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2005-06-16 US disclosed
US-6838229-B2 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-04 US disclosed
US-20030064319-A1 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. 2003-04-03 US disclosed
US-20030039921-A1 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. 2003-02-27 US disclosed
US-5368783-A Novolak resin or polyhydroxystyrene resin, alkoxymethylated amino resin and triazine TOKYO OHKA KOGYO CO., LTD. (JP) 1994-11-29 US disclosed