SCHEMBL499104

SCHEMBL499104

CC(C=Cc1ccc(O)cc1)=Cc1ccccc1

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 3/20 0.53
KMT2A Q03164 3/20 0.53
TDP1 Q9NUW8 3/20 0.53
HSPD1 P10809 2/20 0.53
HSPE1 P61604 2/20 0.53
PKM P14618 2/20 0.53
F3 P13726 2/20 0.53
MEN1 O00255 2/20 0.53
MAPT P10636 2/20 0.53
MAOA P21397 2/20 0.53
MAOB P27338 2/20 0.53
NFKB1 P19838 1/20 0.53
RAB9A P51151 1/20 0.53
NFKB2 Q00653 1/20 0.53
RELA Q04206 1/20 0.53
ALDH2 P05091 1/20 0.53
CYP19A1 P11511 1/20 0.53
CYP1B1 Q16678 1/20 0.53
ESR1 P03372 4/20 0.52
TYR P14679 3/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29382 0.90 ALDH1A1 (0.61) CYP3A4TDP1F3MAPTMAOB
SCHEMBL3084338 0.90 ALDH1A1 (0.61) CYP3A4TDP1F3MAPTMAOB
SCHEMBL23457945 0.90 ALDH1A1 (0.61) CYP3A4TDP1F3MAPTMAOB
SCHEMBL6895682 0.85 MAPT (0.60) CYP3A4KMT2ATDP1F3MAPT
SCHEMBL23457954 0.85 MAPT (0.60) CYP3A4KMT2ATDP1F3MAPT
SCHEMBL23458038 0.85 MAPT (0.60) CYP3A4KMT2ATDP1F3MAPT
SCHEMBL5438537 0.85 MAPT (0.60) CYP3A4KMT2ATDP1F3MAPT
SCHEMBL2622602 0.83 NFE2L2 (0.61) TDP1F3MAPTMAOAMAOB
SCHEMBL2632275 0.83 ALDH1A1 (0.50) TDP1F3MAPTMAOAMAOB
SCHEMBL12319437 0.83 CYP19A1 (0.61) KMT2ATDP1F3MEN1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8105763-B2 Method of forming plated product using negative photoresist composition and photosensitive composition used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-31 US disclosed
US-7879525-B2 A photoresist comprising a resin that undergoes a change in alkali solubility by an acid, an acid generating compound and a corrosion inhibitor, e.g. trimercapto-1,3,5-triazine; stabiliity prior to development; used in the manufacturing of connection terminals during the mounting of semiconductors TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US disclosed
US-20080032242-A1 Method of Forming Plated Product Using Negative Photoresist Composition and Photosensitive Composition Used Therein TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-07 US disclosed
US-20070275320-A1 Chemically Amplified Photorestist Composition, Laminated Product, and Connection Element HITACHI CONSTRUCTION MACHINERY CO., LTD. (JP) 2007-11-29 US disclosed
EP-1761823-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-14 EP disclosed
WO-2006003757-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-12 WO disclosed
US-5955241-A Chemical-amplification-type negative resist composition and method for forming negative resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-21 US disclosed