SCHEMBL4999596

SCHEMBL4999596

CCO[Si](C)(OCC)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
LMNA P02545 1/20 0.33
ALDH1A1 P00352 2/20 0.30
HSD11B1 P28845 1/20 0.30
EPHX2 P34913 1/20 0.30
GRIN2D O15399 3/20 0.30
GRIN3B O60391 3/20 0.30
GRIN1 Q05586 3/20 0.30
GRIN2A Q12879 3/20 0.30
GRIN2B Q13224 3/20 0.30
GRIN2C Q14957 3/20 0.30
GRIN3A Q8TCU5 3/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5002907 0.83 MEN1 (0.35) MEN1KMT2ALMNAALDH1A1HSD11B1
SCHEMBL105577 0.80 LMNA (0.37) MEN1KMT2ALMNAALDH1A1EPHX2
SCHEMBL103781 0.80 MEN1 (0.36) MEN1KMT2ALMNAALDH1A1EPHX2
SCHEMBL5002934 0.77 MEN1 (0.34) MEN1KMT2ALMNA
SCHEMBL4996434 0.77 MEN1 (0.34) MEN1KMT2ALMNA
SCHEMBL4996060 0.75 GRIN2D (0.33) LMNAALDH1A1GRIN2DGRIN3BGRIN1
SCHEMBL4999829 0.69 OPRK1 (0.36) MEN1KMT2ALMNAALDH1A1HSD11B1
SCHEMBL107728 0.68 EPHX2 (0.35) MEN1KMT2ALMNAALDH1A1HSD11B1
SCHEMBL106987 0.68 EPHX2 (0.35) MEN1KMT2ALMNAALDH1A1HSD11B1
SCHEMBL7391547 0.68 GRIN2D (0.39) LMNAGRIN2DGRIN3BGRIN1GRIN2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100415752-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2008-09-03 CN disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
CN-100367472-C Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2008-02-06 CN disclosed
CN-100335488-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2007-09-05 CN disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
CN-1803805-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-07-19 CN disclosed
CN-1793151-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-06-28 CN disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed
CN-1437228-A Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2003-08-20 CN disclosed