SCHEMBL4996434

SCHEMBL4996434

CCO[Si](CC)(CC)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.34

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
LMNA P02545 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5002841 0.83 MEN1 (0.36) MEN1KMT2ALMNA
SCHEMBL4999754 0.81 ALDH1A1 (0.33) MEN1KMT2ALMNA
SCHEMBL5002934 0.79 MEN1 (0.34) MEN1KMT2ALMNA
SCHEMBL103781 0.78 MEN1 (0.36) MEN1KMT2ALMNA
SCHEMBL105577 0.78 LMNA (0.37) MEN1KMT2ALMNA
SCHEMBL5002907 0.77 MEN1 (0.35) MEN1KMT2ALMNA
SCHEMBL4999596 0.77 MEN1 (0.35) MEN1KMT2ALMNA
SCHEMBL27572715 0.75
SCHEMBL4999949 0.68 MEN1 (0.32) MEN1KMT2ALMNA
SCHEMBL4999829 0.67 OPRK1 (0.36) MEN1KMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100415752-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2008-09-03 CN disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
CN-100367472-C Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2008-02-06 CN disclosed
CN-100335488-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2007-09-05 CN disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
CN-1803805-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-07-19 CN disclosed
CN-1793151-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-06-28 CN disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed
CN-1437228-A Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2003-08-20 CN disclosed