SCHEMBL4999743

SCHEMBL4999743

CCCO[SiH](OCCC)C1=CCCCC1

nearest known ligand 0.34

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.33
RAB9A P51151 1/20 0.33
HDAC4 P56524 1/20 0.32
HDAC2 Q92769 1/20 0.32
HDAC8 Q9BY41 1/20 0.32
HDAC6 Q9UBN7 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5005559 0.85 ALDH1A1 (0.32) ALDH1A1RAB9A
SCHEMBL27648847 0.74 HDAC4 (0.32) HDAC4HDAC2HDAC8HDAC6
SCHEMBL3838544 0.73 HDAC1 (0.33) RAB9AHDAC2
SCHEMBL104621 0.72 FFAR4 (0.32) HDAC2
SCHEMBL3620796 0.69 ALDH1A1 (0.31) ALDH1A1RAB9A
SCHEMBL3893406 0.69 ALDH1A1 (0.40) ALDH1A1RAB9A
SCHEMBL104976 0.68
SCHEMBL296848 0.67
SCHEMBL9497891 0.67 CYP1A2 (0.35) ALDH1A1RAB9A
SCHEMBL1144067 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
EP-2584005-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF Tosoh Corporation (JP) 2013-04-24 EP disclosed
US-20130090447-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES TOSOH CORPORATION (JP) 2013-04-11 US disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed