SCHEMBL4999952

SCHEMBL4999952

CO[SiH](OC)C(C)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.46

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
SLC22A2 O15244 1/20 0.46
SLC47A1 Q96FL8 1/20 0.46
MAPT P10636 1/20 0.45
ALDH1A1 P00352 2/20 0.36
NPC1 O15118 1/20 0.36
GRIN2D O15399 1/20 0.35
GRIN3B O60391 1/20 0.35
GRIN1 Q05586 1/20 0.35
GRIN2A Q12879 1/20 0.35
GRIN2B Q13224 1/20 0.35
GRIN2C Q14957 1/20 0.35
GRIN3A Q8TCU5 1/20 0.35
EPHX2 P34913 5/20 0.33
GAA P10253 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
MEN1 O00255 3/20 0.33
KMT2A Q03164 3/20 0.33
GLA P06280 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5002938 0.78 SLC22A2 (0.42) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL4999624 0.73 SLC22A2 (0.50) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL19480316 0.70 SLC22A2 (0.52) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL19529543 0.70 SLC22A2 (0.52) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL138375 0.68 SLC22A2 (0.62) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL677940 0.68 SLC22A2 (0.62) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL455611 0.68 SLC22A2 (0.62) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL14325795 0.67 SLC22A2 (0.48) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL19758126 0.67 SLC22A2 (0.48) SLC22A2SLC47A1MAPTALDH1A1NPC1
SCHEMBL17789919 0.65 SLC22A2 (0.46) SLC22A2SLC47A1MAPTALDH1A1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed