⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14523968 | 0.92 | TGM2 (0.30) | — | |
| SCHEMBL3908663 | 0.88 | TGM2 (0.32) | — | |
| SCHEMBL14523965 | 0.86 | EPHX2 (0.34) | — | |
| SCHEMBL12345974 | 0.83 | EPHX2 (0.31) | — | |
| SCHEMBL825473 | 0.83 | TSHR (0.38) | — | |
| SCHEMBL6103697 | 0.81 | TGM2 (0.32) | — | |
| SCHEMBL12345980 | 0.80 | EPHX2 (0.33) | — | |
| SCHEMBL4401855 | 0.80 | TSHR (0.41) | — | |
| SCHEMBL6319419 | 0.79 | — | — | |
| SCHEMBL6318349 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1637514-B1 | METHOD FOR PRODUCING FLUORINE-CONTAINING ACRYLATE | TOSOH F TECH INC (JP) | 2014-05-07 | — | — | EP | disclosed |
| US-8557501-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-15 | — | — | US | disclosed |
| US-8557501-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-15 | — | — | US | disclosed |
| US-20120178029-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-07-12 | — | — | US | disclosed |
| US-20120178029-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-07-12 | — | — | US | disclosed |
| US-8182978-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-05-22 | — | — | US | disclosed |
| US-8182978-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-05-22 | — | — | US | disclosed |
| US-20100196825-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-08-05 | — | — | US | disclosed |
| US-20100196825-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-08-05 | — | — | US | disclosed |
| US-7651831-B2 | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-01-26 | — | — | US | disclosed |
| US-7651831-B2 | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-01-26 | — | — | US | disclosed |
| US-7638264-B2 | forming pattern on semiconductors; acrylic terpolymer with fluorosulfonamide-containing unit e.g. 2-trifluoromethanesulfonylaminoethyl methacrylate, second unit having pendant acid labile group, and third unit having a lactone moiety, and acid generator; good etch resistance and dissolution properties | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-12-29 | — | — | US | disclosed |
| US-7638264-B2 | forming pattern on semiconductors; acrylic terpolymer with fluorosulfonamide-containing unit e.g. 2-trifluoromethanesulfonylaminoethyl methacrylate, second unit having pendant acid labile group, and third unit having a lactone moiety, and acid generator; good etch resistance and dissolution properties | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-12-29 | — | — | US | disclosed |
| US-7470808-B2 | Method for producing fluorine-containing acrylate | TOSOH F-TECH, INC. (JP) | 2008-12-30 | — | — | US | disclosed |
| US-7470808-B2 | Method for producing fluorine-containing acrylate | TOSOH F-TECH, INC. (JP) | 2008-12-30 | — | — | US | disclosed |
| US-20080233514-A1 | POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-25 | — | — | US | disclosed |
| US-20080233514-A1 | POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-25 | — | — | US | disclosed |
| US-20060122423-A1 | Method for producing fluorine-containing acrylate | SAGAMI CHEMICAL RESEARCH CENTER (JP) | 2006-06-08 | — | — | US | disclosed |
| EP-1637514-A1 | METHOD FOR PRODUCING FLUORINE-CONTAINING ACRYLATE | Tosoh F-Tech, Inc. (JP) | 2006-03-22 | — | — | EP | disclosed |