SCHEMBL5032610

SCHEMBL5032610

CCOC(=O)CCNCCOC(C)=O

nearest known ligand 0.46

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.46
LMNA P02545 1/20 0.46
HSD17B10 Q99714 1/20 0.46
MGAM O43451 1/20 0.45
GAA P10253 1/20 0.45
SI P14410 1/20 0.45
MGAM2 Q2M2H8 1/20 0.45
LTA4H P09960 4/20 0.45
TSHR P16473 1/20 0.44
CYP1A2 P05177 1/20 0.41
MAPT P10636 1/20 0.38
HPGD P15428 1/20 0.38
KMT2A Q03164 1/20 0.38
TRPA1 O75762 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
TOP2A P11388 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4380952 0.89 ALDH1A1 (0.42) ALDH1A1LMNAHSD17B10GAALTA4H
SCHEMBL4464939 0.86 GAA (0.59) ALDH1A1MGAMGAASIMGAM2
SCHEMBL5701679 0.85 TSHR (0.46) ALDH1A1LMNAHSD17B10MGAMGAA
SCHEMBL13756031 0.84 GAA (0.56) ALDH1A1MGAMGAASIMGAM2
Hydrochloric Acid SCHEMBL11851530 0.84 GAA (0.56) ALDH1A1MGAMGAASIMGAM2
SCHEMBL4378677 0.84 ALDH1A1 (0.35) ALDH1A1LMNAHSD17B10MGAMGAA
SCHEMBL28565091 0.84 CHRM5 (0.38) ALDH1A1LMNAHSD17B10GAALTA4H
SCHEMBL13435480 0.83 GAA (0.46) ALDH1A1MGAMGAASIMGAM2
SCHEMBL5383899 0.82 LTA4H (0.38) ALDH1A1GAALTA4HTSHRCYP1A2
SCHEMBL28046764 0.82 LTA4H (0.38) ALDH1A1LMNAHSD17B10MGAMGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115044040-B Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method 信越化学工业株式会社 2024-07-02 CN disclosed
CN-113527101-B Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component 信越化学工业株式会社 2024-04-23 CN disclosed
CN-111381447-B Photosensitive resin composition, laminate, and pattern forming method 信越化学工业株式会社 2024-03-08 CN disclosed
CN-117501180-A Laminate, method for producing laminate, and method for forming pattern 信越化学工业株式会社 2024-02-02 CN disclosed
CN-109388023-B Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming method 信越化学工业株式会社 2023-12-22 CN disclosed
CN-109388022-B Silicone-structure-containing polymer, photosensitive resin composition, photosensitive resin coating layer, photosensitive dry film, laminate, and pattern forming method 信越化学工业株式会社 2023-07-28 CN disclosed
CN-113527680-B Polymer, photosensitive resin composition, pattern forming method, cured film, and electronic component 信越化学工业株式会社 2023-04-28 CN disclosed
CN-108107676-B Chemically amplified positive resist film laminate and pattern formation method 信越化学工业株式会社 2023-02-21 CN disclosed
CN-108388082-B Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method 信越化学工业株式会社(JP) 2023-01-13 CN disclosed
CN-108459469-B Pattern forming method 信越化学工业株式会社 2022-11-11 CN disclosed
CN-106249542-A Semiconductor device, stack-up type semiconductor device, sealing back-set bed type semiconductor device and the manufacture method of these devices 信越化学工业株式会社 2016-12-21 CN disclosed
CN-105487337-A Chemically amplified negative resist composition, photo-curable dry film, making method, patterning process, and electric/electronic part-protecting film SHINETSU CHEMICAL CO 2016-04-13 CN disclosed
CN-105404096-A CHEMICALLY AMPLIFIED POSITIVE RESIST DRY FILM, DRY FILM LAMINATE AND METHOD OF PREPARING LAMINATE SHINETSU CHEMICAL CO 2016-03-16 CN disclosed
CN-105315467-A Silicone structure-bearing polymer, negative resist composition, photo-curable dry film, and patterning process SHINETSU CHEMICAL CO 2016-02-10 CN disclosed
CN-105301905-A Chemically amplified positive resist composition and patterning process SHINETSU CHEMICAL CO 2016-02-03 CN disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
EP-1693707-A1 Positive resist composition, and patterning process using the same Shinetsu Chemical Co., Ltd. (JP) 2006-08-23 EP disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed