Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.35 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.34 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.34 |
| ▸ | CHRM3 | P20309 | 2/20 | 0.34 |
| ▸ | PGR | P06401 | 1/20 | 0.34 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.34 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.34 |
| ▸ | HTR1A | P08908 | 1/20 | 0.34 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.34 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.34 |
| ▸ | CHRNB4 | P30926 | 1/20 | 0.34 |
| ▸ | CHRNA3 | P32297 | 1/20 | 0.34 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.34 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.34 |
| ▸ | CHRNA10 | Q9GZZ6 | 1/20 | 0.34 |
| ▸ | CHRNA9 | Q9UGM1 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | GALR3 | O60755 | 2/20 | 0.33 |
| ▸ | GAA | P10253 | 2/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4380952 | 0.87 | ALDH1A1 (0.42) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL28565091 | 0.86 | CHRM5 (0.38) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL5032610 | 0.84 | ALDH1A1 (0.46) | ALDH1A1TSHRGAALTA4HCYP1A2 | |
| SCHEMBL5701679 | 0.83 | TSHR (0.46) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL5907913 | 0.81 | PAOX (0.33) | ALDH1A1TSHRGAALTA4HCYP1A2 | |
| SCHEMBL5383899 | 0.81 | LTA4H (0.38) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL68618 | 0.80 | ALDH1A1 (0.50) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL28558209 | 0.79 | SMN1; SMN2 (0.42) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL28367477 | 0.79 | SMN1; SMN2 (0.42) | ALDH1A1CHRM5CHRM1CHRM3PGR | |
| SCHEMBL28472725 | 0.79 | SMN1; SMN2 (0.42) | ALDH1A1CHRM5CHRM1CHRM3PGR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115044040-B | Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method | 信越化学工业株式会社 | 2024-07-02 | — | — | CN | disclosed |
| CN-113527101-B | Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component | 信越化学工业株式会社 | 2024-04-23 | — | — | CN | disclosed |
| CN-111381447-B | Photosensitive resin composition, laminate, and pattern forming method | 信越化学工业株式会社 | 2024-03-08 | — | — | CN | disclosed |
| CN-117501180-A | Laminate, method for producing laminate, and method for forming pattern | 信越化学工业株式会社 | 2024-02-02 | — | — | CN | disclosed |
| CN-109388023-B | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming method | 信越化学工业株式会社 | 2023-12-22 | — | — | CN | disclosed |
| CN-109388022-B | Silicone-structure-containing polymer, photosensitive resin composition, photosensitive resin coating layer, photosensitive dry film, laminate, and pattern forming method | 信越化学工业株式会社 | 2023-07-28 | — | — | CN | disclosed |
| CN-113527680-B | Polymer, photosensitive resin composition, pattern forming method, cured film, and electronic component | 信越化学工业株式会社 | 2023-04-28 | — | — | CN | disclosed |
| CN-108107676-B | Chemically amplified positive resist film laminate and pattern formation method | 信越化学工业株式会社 | 2023-02-21 | — | — | CN | disclosed |
| CN-108388082-B | Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method | 信越化学工业株式会社（JP） | 2023-01-13 | — | — | CN | disclosed |
| CN-108459469-B | Pattern forming method | 信越化学工业株式会社 | 2022-11-11 | — | — | CN | disclosed |
| CN-106249547-B | Photocurable resin composition and photocurable dry film using the same | 信越化学工业株式会社 | 2020-10-23 | — | — | CN | disclosed |
| CN-106249542-B | Semiconductor device, multilayer semiconductor device, sealed multilayer semiconductor device, and method for manufacturing these devices | 信越化学工业株式会社 | 2020-10-23 | — | — | CN | disclosed |
| CN-111381447-A | Photosensitive resin composition, laminate, and pattern formation method | 信越化学工业株式会社 | 2020-07-07 | — | — | CN | disclosed |
| CN-105487337-B | Chemically amplified negative resist composition, photocurable dry film, method for producing the same, and patterning method | 信越化学工业株式会社 | 2020-06-05 | — | — | CN | disclosed |
| CN-110727174-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film and black matrix | 信越化学工业株式会社 | 2020-01-24 | — | — | CN | disclosed |
| US-7479361-B2 | Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process | NEC ELECTRONICS CORPORATION (JP) | 2009-01-20 | — | — | US | disclosed |
| US-6835804-B2 | Effecting deblocking reaction on an addition polymer in presence of acid catalyst | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-28 | — | — | US | disclosed |
| US-20040259373-A1 | Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process | NEC ELECTRONICS CORPORATION (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040023151-A1 | Negative resist material and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. | 2004-02-05 | — | — | US | disclosed |
| US-20020111459-A1 | Preparation of polymer, and resist composition using the polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-15 | — | — | US | disclosed |