SCHEMBL503559

SCHEMBL503559

CC(=CC(C)CC12CC3CC(CC(C3)C1)C2)C(=O)O

nearest known ligand 0.42

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.42
NPSR1 Q6W5P4 1/20 0.40
ALDH1A1 P00352 7/20 0.38
TSHR P16473 2/20 0.37
EPHX2 P34913 2/20 0.36
HSD17B10 Q99714 1/20 0.36
KMT2A Q03164 2/20 0.35
MEN1 O00255 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1218862 0.77 ALDH1A1 (0.40) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL1219029 0.75 MEN1 (0.43) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL5668285 0.75 MEN1 (0.43) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL2409328 0.73 ALDH1A1 (0.42) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL5613623 0.72 SMN1; SMN2 (0.53) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL1218778 0.71 GLA (0.36) SMN1; SMN2NPSR1ALDH1A1
Carbamic Acid SCHEMBL27703082 0.69 ALDH1A1 (0.47) SMN1; SMN2NPSR1ALDH1A1TSHRHSD17B10
SCHEMBL3215937 0.69 SMN1; SMN2 (0.50) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL22580151 0.68 SMN1; SMN2 (0.49) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2
SCHEMBL11637137 0.68 ALDH1A1 (0.49) SMN1; SMN2NPSR1ALDH1A1TSHREPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1708027-B1 UPPER LAYER FILM FORMING COMPOSITION FOR LIQUID IMMERSION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORP (JP) 2019-03-13 EP disclosed
US-8895229-B2 Composition for formation of upper layer film, and method for formation of photoresist pattern JSR CORPORATION (JP) 2014-11-25 US disclosed
US-8808974-B2 Method for forming pattern JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8507189-B2 Upper layer film forming composition and method of forming photoresist pattern JSR CORPORATION (JP) 2013-08-13 US disclosed
US-8501389-B2 Upper layer-forming composition and resist patterning method JSR CORPORATION (JP) 2013-08-06 US disclosed
US-8435718-B2 Upper layer-forming composition and photoresist patterning method JSR CORPORATION (JP) 2013-05-07 US disclosed
US-8247165-B2 Upper layer film forming composition for liquid immersion and method of forming photoresist pattern JSR CORPORATION (JP) 2012-08-21 US disclosed
US-20120028198-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2012-02-02 US disclosed
US-20110262859-A1 UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD JSR CORPORATION (JP) 2011-10-27 US disclosed
US-7781142-B2 Copolymer and top coating composition JSR CORPORATION (JP) 2010-08-24 US disclosed
US-20100068650-A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed
US-20100040974-A1 UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2010-02-18 US disclosed
US-20100021852-A1 COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN JSR CORPORATION (JP) 2010-01-28 US disclosed
US-20080038661-A1 Copolymer and Top Coating Composition JSR CORPORATION (JP) 2008-02-14 US disclosed
US-20070269734-A1 Uper Layer Film Forming Composition for Liquid Immersion and Method of Forming Photoresist Pattern JSR CORPORATION (JP) 2007-11-22 US disclosed