Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.42 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.42 |
| ▸ | ESR1 | P03372 | 7/20 | 0.39 |
| ▸ | ESR2 | Q92731 | 5/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.35 |
| ▸ | UQCRB | P14927 | 1/20 | 0.35 |
| ▸ | CA12 | O43570 | 1/20 | 0.34 |
| ▸ | CA1 | P00915 | 1/20 | 0.34 |
| ▸ | CA2 | P00918 | 1/20 | 0.34 |
| ▸ | CA9 | Q16790 | 1/20 | 0.34 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.34 |
| ▸ | FNTA | P49354 | 1/20 | 0.34 |
| ▸ | FNTB | P49356 | 1/20 | 0.34 |
| ▸ | MMP2 | P08253 | 1/20 | 0.33 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL548279 | 1.00 | GPR3 (0.42) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL9680578 | 1.00 | GPR3 (0.42) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL2350092 | 0.93 | KCNH2 (0.42) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL6118365 | 0.91 | GPR3 (0.48) | GPR3KCNH2PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL37032 | 0.89 | GPR3 (0.50) | GPR3KCNH2PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL31155703 | 0.89 | GPR3 (0.50) | GPR3KCNH2PTPN1CA1CA2 | |
| SCHEMBL3798074 | 0.89 | ESR1 (0.36) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL10008137 | 0.87 | GPR3 (0.48) | GPR3KCNH2PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL31028107 | 0.87 | KCNH2 (0.43) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL548274 | 0.86 | KCNH2 (0.39) | GPR3KCNH2ESR1ESR2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 239 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1111465-B1 | Negative radiation-sensitive resin composition | JSR CORP (JP) | 2010-02-17 | — | — | EP | claimed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | claimed |
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-119452307-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| WO-2025018305-A1 | METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT | JSR株式会社 | 2025-01-23 | — | — | WO | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| WO-2024158178-A1 | THERMOSETTING RESIN COMPOSITION, CURED FILM, AND SOLID-STATE IMAGING DEVICE | 동우 화인켐 주식회사 | 2024-08-02 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| EP-1253470-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-10-30 | — | — | EP | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| EP-1231205-A1 | VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2002-08-14 | — | — | EP | disclosed |
| US-6403288-B1 | COATING WITH COPOLYMER COMPRISING HYDROXYSTYRENE DERIVATIVE MONOMER HAVING ACID DISSOCIABLE GROUP; EXPOSURE TO RADIATION; DEVELOPMENT | JSR CORPORATION (JP) | 2002-06-11 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| US-5679496-A | CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |
| EP-0473547-A1 | Olefinically unsaturated onium salts | CIBA-GEIGY AG (CH) | 1992-03-04 | — | — | EP | disclosed |