Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.42 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.42 |
| ▸ | ESR1 | P03372 | 7/20 | 0.39 |
| ▸ | ESR2 | Q92731 | 5/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.35 |
| ▸ | UQCRB | P14927 | 1/20 | 0.35 |
| ▸ | CA12 | O43570 | 1/20 | 0.34 |
| ▸ | CA1 | P00915 | 1/20 | 0.34 |
| ▸ | CA2 | P00918 | 1/20 | 0.34 |
| ▸ | CA9 | Q16790 | 1/20 | 0.34 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.34 |
| ▸ | FNTA | P49354 | 1/20 | 0.34 |
| ▸ | FNTB | P49356 | 1/20 | 0.34 |
| ▸ | MMP2 | P08253 | 1/20 | 0.33 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL503657 | 1.00 | GPR3 (0.42) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL9680578 | 1.00 | GPR3 (0.42) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL2350092 | 0.93 | KCNH2 (0.42) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL6118365 | 0.91 | GPR3 (0.48) | GPR3KCNH2PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL37032 | 0.89 | GPR3 (0.50) | GPR3KCNH2PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL31155703 | 0.89 | GPR3 (0.50) | GPR3KCNH2PTPN1CA1CA2 | |
| SCHEMBL3798074 | 0.89 | ESR1 (0.36) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL10008137 | 0.87 | GPR3 (0.48) | GPR3KCNH2PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL31028107 | 0.87 | KCNH2 (0.43) | GPR3KCNH2ESR1ESR2LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL548274 | 0.86 | KCNH2 (0.39) | GPR3KCNH2ESR1ESR2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 202 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102939-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-03 | — | — | CN | claimed |
| CN-115873176-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| CN-115873175-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-12 | — | — | CN | claimed |
| CN-116102938-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102937-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102680-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102939-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-115873175-A | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| CN-115873176-A | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| US-9146467-B2 | Coating compositions | MERCK PATENT GMBH (DE) | 2015-09-29 | — | — | US | claimed |
| US-20130236833-A1 | COATING COMPOSITIONS | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2013-09-12 | — | — | US | claimed |
| US-20070111138-A1 | Photoactive compounds | MERCK PATENT GMBH (DE) | 2007-05-17 | — | — | US | claimed |
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| US-5679496-A | CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |