SCHEMBL503761

SCHEMBL503761

CCCCCC(F)(F)C(F)(F)OC(F)(F)C(F)(F)CCCCC

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CES2 O00748 4/20 0.39
LPAR1 Q92633 1/20 0.39
LPAR3 Q9UBY5 1/20 0.39
FAAH O00519 8/20 0.33
TSHR P16473 1/20 0.33
THRB P10828 1/20 0.33
CES1 P23141 6/20 0.32
SMPD1 P17405 2/20 0.32
GGPS1 O95749 2/20 0.32
MEN1 O00255 1/20 0.32
CYP1A2 P05177 1/20 0.32
KMT2A Q03164 1/20 0.32
HSD17B10 Q99714 1/20 0.32
FDPS P14324 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5704693 0.92 CES2 (0.31) CES2LPAR1LPAR3FAAHTSHR
SCHEMBL12039520 0.91 CES2 (0.38) CES2LPAR1LPAR3FAAHTSHR
SCHEMBL111778 0.89 CES2 (0.37) CES2LPAR1LPAR3FAAHTSHR
SCHEMBL866821 0.89 CES2 (0.37) CES2LPAR1LPAR3FAAHTSHR
SCHEMBL1262707 0.85 CES2 (0.37) CES2LPAR1LPAR3FAAHTSHR
SCHEMBL17361339 0.84
SCHEMBL19896624 0.81
SCHEMBL16770321 0.80 CES2 (0.39) CES2LPAR1LPAR3FAAHCES1
SCHEMBL12323606 0.80 CES2 (0.39) CES2LPAR1LPAR3FAAHCES1
SCHEMBL23642258 0.79 CES2 (0.44) CES2LPAR1LPAR3FAAHCES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024212188-A1 ELECTROLYTE SOLUTION, BATTERY CELL, BATTERY, AND ELECTRIC DEVICE 宁德时代新能源科技股份有限公司 2024-10-17 WO claimed
US-8465850-B2 Method for the application of active materials onto a surface and devices made with such methods E I DU PONT DE NEMOURS AND COMPANY (US) 2013-06-18 US disclosed
US-8435718-B2 Upper layer-forming composition and photoresist patterning method JSR CORPORATION (JP) 2013-05-07 US disclosed
US-8287766-B2 depositing fluorinated aryl ethers and polyanilines or polythiophenes combined with fluorinated polysulfonic acids and/or mixtures, onto glass substrates, useful in organic electronic devices; organic light emitting diodes E I DU PONT DE NEMOURS AND COMPANY (US) 2012-10-16 US disclosed
EP-1950610-B1 IMMERSION LITHOGRAPHIC COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR CORP (JP) 2012-05-02 EP disclosed
US-20120028198-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2012-02-02 US disclosed
US-20110180761-A1 METHOD FOR THE APPLICATION OF ACTIVE MATERIALS ONTO A SURFACES AND DEVICES MADE WITH SUCH METHODS E. I. DU PONT DE NEMOURS AND COMPANY (US) 2011-07-28 US disclosed
US-7686978-B2 Method for the application of active materials onto active surfaces and devices made with such methods E. I. DU PONT DE NEMOURS AND COMPANY (US) 2010-03-30 US disclosed
US-20100003615-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2010-01-07 US disclosed
US-7531700-B2 Fluorinated arylethers and methods for use thereof E.I. DU PONT DE NEMOURS AND COMPANY (US) 2009-05-12 US disclosed
EP-1950610-A1 COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR Corporation (JP) 2008-07-30 EP disclosed
US-20050269550-A1 Method for the application of active materials onto active surfaces and devices made with such methods PETROV VIACHESLAV A 2005-12-08 US disclosed
WO-2005031889-A2 METHOD FOR THE APPLICATION OF ACTIVE MATERIALS ONTO ACTIVE SURFACES AND DEVICES MADE WITH SUCH METHODS E.I. DUPONT DE NEMOURS AND COMPANY (US) 2005-04-07 WO disclosed
WO-2005030688-A2 FLUORINATED ARYLETHERS AND METHODS FOR USE THEREOF E.I. DUPONT DE NEMOURS AND COMPANY (US) 2005-04-07 WO disclosed
US-20050065382-A1 Fluorinated arylethers and methods for use thereof E.I. DU PONT DE NEMOURS AND COMPANY 2005-03-24 US disclosed
US-20050062021-A1 Method for the application of active materials onto active surfaces and devices made with such methods LG CHEM, LTD. (KR) 2005-03-24 US disclosed
US-3926989-A Process for the preparation of aryl-1,1,2,2-tetrafluoroethyl ethers HOECHST AG 1975-12-16 US disclosed
US-3926989-A Process for the preparation of aryl-1,1,2,2-tetrafluoroethyl ethers HOECHST AG 1975-12-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20050065382-A1 Fluorinated arylethers and methods for use thereof CYP2F1, FLI1, AOX1 CES2 84/4885LPAR1 2042/4885LPAR3 1611/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.