SCHEMBL513305

SCHEMBL513305

C=C(C)COC12CC3CC(O)(CC(O)(C3)C1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL514808 0.85 PKM (0.38)
SCHEMBL18758104 0.81
SCHEMBL14149400 0.78 DPP4 (0.31)
SCHEMBL14608477 0.76
SCHEMBL3847068 0.76 NPSR1 (0.36)
SCHEMBL14410607 0.74
SCHEMBL10305868 0.73
SCHEMBL13870716 0.72 PKM (0.36)
SCHEMBL15450122 0.72
SCHEMBL15450120 0.72 DPP4 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 94 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1766474-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2007-03-28 EP claimed
WO-2005121894-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. (DE) 2005-12-22 WO claimed
US-20050271974-A1 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. 2005-12-08 US claimed
CN-114207043-A Composition for producing low dielectric constant siliceous film and method for producing cured film and electronic device using the same 默克专利有限公司 2022-03-18 CN disclosed
EP-1815296-B1 A COMPOSITION FOR COATING OVER A PHTORESIST PATTERN MERCK PATENT GMBH (DE) 2020-02-19 EP disclosed
EP-2102156-B1 PHOTOACTIVE COMPOUNDS MERCK PATENT GMBH (DE) 2019-06-26 EP disclosed
US-20190180888-A1 CONDUCTIVE POLYMER COMPOSITION, COATED ARTICLE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-13 US disclosed
EP-2598589-B1 A COMPOSITION FOR COATING OVER A PHOTORESIST PATTERN MERCK PATENT GMBH (DE) 2019-05-22 EP disclosed
EP-1877864-B1 NANOCOMPOSITE PHOTOSENSITIVE COMPOSITION AND USE THEREOF MERCK PATENT GMBH (DE) 2018-09-19 EP disclosed
CN-103025835-B The compositions of coating on photoetching agent pattern 默克专利有限公司 2016-06-29 CN disclosed
US-8852848-B2 Composition for coating over a photoresist pattern Z Electronic Materials USA Corp. (US) 2014-10-07 US disclosed
WO-2004101490-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-11-25 WO disclosed
US-20040229155-A1 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. 2004-11-18 US disclosed
WO-2004077153-A2 PHOTOSENSITIVE COMPOSITION AND USE THEREOF AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-09-10 WO disclosed
US-20040175653-A1 Photosensitive composition and use thereof AZ ELECTRONIC MATERIALS USA CORP. 2004-09-09 US disclosed
US-20030235782-A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds MERCK PATENT GMBH (DE) 2003-12-25 US disclosed
US-20030235775-A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds CLARIANT INTERNATIONAL LTD (CH) 2003-12-25 US disclosed
EP-1311908-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF CLARIANT INTERNATIONAL LTD. (CH) 2003-05-21 EP disclosed
US-6447980-B1 POLY(MALEIC ANHYDRIDE-CO-T-BUTYL 5-NORBORNENE-2-CARBOXYLATE-CO-2-HYDROXYETHYL 5-NORBORNENE-2-CARBOXYLATE-CO-5-NORBORNENE-2-CARBOXYLIC ACID-CO-2-METHYL ADAMANTYL METHACRYLATE-CO-MEVALONIC LACTONE) AND ACID GENERATOR CLARIANT FINANCE (BVI) LIMITED (VG) 2002-09-10 US disclosed
WO-2002006901-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF CLARIANT INTERNATIONAL LTD (CH) 2002-01-24 WO disclosed