SCHEMBL514808

SCHEMBL514808

C=C(C)COC12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.39

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
PKM P14618 1/20 0.38
ALDH1A1 P00352 2/20 0.34
DPP4 P27487 1/20 0.34
HSD11B1 P28845 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL513305 0.85
SCHEMBL13957641 0.84 ALDH1A1 (0.36) PKMALDH1A1DPP4HSD11B1L3MBTL1
SCHEMBL13870716 0.84 PKM (0.36) PKMALDH1A1DPP4HSD11B1
SCHEMBL3847068 0.82 NPSR1 (0.36) ALDH1A1
SCHEMBL5917754 0.79 PKM (0.42) PKMALDH1A1DPP4HSD11B1
SCHEMBL22991690 0.77 PKM (0.41) PKMALDH1A1DPP4HSD11B1
SCHEMBL17036824 0.77 PKM (0.41) PKMALDH1A1HSD11B1
SCHEMBL2758375 0.77 PKM (0.41) PKMALDH1A1DPP4HSD11B1
SCHEMBL18758104 0.76
SCHEMBL13998863 0.75 PKM (0.42) PKMALDH1A1DPP4HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115160495-A Photoresist film-forming resin containing maleimide structure and preparation method thereof 四川华造宏材科技有限公司 2022-10-11 CN claimed
CN-109294314-B Epoxy acrylic acid cathodic electrophoretic coating resin emulsion and preparation method thereof 中国海洋石油集团有限公司 2020-10-16 CN claimed
EP-1766474-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2007-03-28 EP claimed
WO-2005121894-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. (DE) 2005-12-22 WO claimed
US-20050271974-A1 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. 2005-12-08 US claimed
CN-122071553-A Preparation method of negative development photoresist resin 万华化学集团股份有限公司 2026-05-22 CN disclosed
CN-119060530-B Preparation process of composite ceramic material 淮北师范大学 2025-01-28 CN disclosed
CN-119242126-A Preparation process of halogen-free flame-retardant solid powder coating 泉州蝶彩新材料有限责任公司 2025-01-03 CN disclosed
CN-119060530-A Preparation process of composite ceramic material 淮北师范大学 2024-12-03 CN disclosed
CN-115160495-A Photoresist film-forming resin containing maleimide structure and preparation method thereof 四川华造宏材科技有限公司 2022-10-11 CN disclosed
CN-114207043-A Composition for producing low dielectric constant siliceous film and method for producing cured film and electronic device using the same 默克专利有限公司 2022-03-18 CN disclosed
CN-109294314-B Epoxy acrylic acid cathodic electrophoretic coating resin emulsion and preparation method thereof 中国海洋石油集团有限公司 2020-10-16 CN disclosed
US-20040229155-A1 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. 2004-11-18 US disclosed
WO-2004077153-A2 PHOTOSENSITIVE COMPOSITION AND USE THEREOF AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-09-10 WO disclosed
US-20040175653-A1 Photosensitive composition and use thereof AZ ELECTRONIC MATERIALS USA CORP. 2004-09-09 US disclosed
US-20030235782-A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds MERCK PATENT GMBH (DE) 2003-12-25 US disclosed
US-20030235775-A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds CLARIANT INTERNATIONAL LTD (CH) 2003-12-25 US disclosed
EP-1311908-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF CLARIANT INTERNATIONAL LTD. (CH) 2003-05-21 EP disclosed
US-6447980-B1 POLY(MALEIC ANHYDRIDE-CO-T-BUTYL 5-NORBORNENE-2-CARBOXYLATE-CO-2-HYDROXYETHYL 5-NORBORNENE-2-CARBOXYLATE-CO-5-NORBORNENE-2-CARBOXYLIC ACID-CO-2-METHYL ADAMANTYL METHACRYLATE-CO-MEVALONIC LACTONE) AND ACID GENERATOR CLARIANT FINANCE (BVI) LIMITED (VG) 2002-09-10 US disclosed
WO-2002006901-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF CLARIANT INTERNATIONAL LTD (CH) 2002-01-24 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030235782-A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds SUN2, UROD, ERCC1 PKM 3037/4885ALDH1A1 2510/4885DPP4 3000/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.