SCHEMBL5175262

SCHEMBL5175262

C=CCc1cc(C(=O)O)c(C(=O)O)cc1-c1cc(C(=O)O)c(C(=O)O)cc1CC=C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 4/20 0.39
TSHR P16473 2/20 0.39
PTGDR Q13258 1/20 0.37
PTGDR2 Q9Y5Y4 1/20 0.37
GABRA1 P14867 4/20 0.37
GABRB2 P47870 4/20 0.37
POLB P06746 3/20 0.36
ALDH1A1 P00352 4/20 0.35
MAPT P10636 3/20 0.35
HPGD P15428 3/20 0.35
HSD17B10 Q99714 2/20 0.35
KDM4E B2RXH2 3/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
MEN1 O00255 2/20 0.33
CNR1 P21554 2/20 0.33
CNR2 P34972 2/20 0.33
KMT2A Q03164 2/20 0.33
ALOX5 P09917 2/20 0.33
AKR1B1 P15121 2/20 0.33
HMGB1 P09429 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29225947 0.90 GABRA1 (0.41) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL22160245 0.86 GABRA1 (0.38) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL2053985 0.85 GABRA1 (0.41) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL5175539 0.81 TSHR (0.37) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL6535892 0.79 GABRA1 (0.39) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL5187070 0.78 KDM4E (0.38) GAATSHRGABRA1GABRB2POLB
SCHEMBL2535160 0.77 PTGDR (0.36) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL9081528 0.76 IDO1 (0.42) GAATSHRPTGDRPTGDR2GABRA1
SCHEMBL11500121 0.75 ALDH1A1 (0.39) GAATSHRGABRA1GABRB2POLB
SCHEMBL278481 0.74 KDM4E (0.46) GAATSHRPTGDRPTGDR2GABRA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US claimed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US claimed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP claimed
EP-1013650-B1 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part HITACHI CHEM DUPONT MICROSYS (JP) 2007-01-24 EP disclosed
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US disclosed
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US disclosed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US disclosed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US disclosed
US-6329494-B1 HIGH-SPEED DEVELOPABILITY, HIGH RESOLUTION AND GOOD DIMENSIONAL ACCURACY TO SUIT THEM TO THE PRODUCTION OF INTERLAYER INSULATING FILMS OR SURFACE-PROTECTING FILMS IN SEMICONDUCTOR DEVICES HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2001-12-11 US disclosed
EP-1013650-A3 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2001-10-24 EP disclosed
JP-2000281671-A TETRACARBOXYLIC DIANHYDRIDE, ITS DERIVATIVE AND PRODUCTION, POLYIMIDE PRECURSOR, POLYIMIDE, RESIN COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION OF RELIEF PATTERN, AND ELECTRONIC PART HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD 2000-10-10 JP disclosed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP disclosed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP disclosed