SCHEMBL533667

SCHEMBL533667

CCCCOC(=O)NC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.62

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 17/20 0.62
L3MBTL1 Q9Y468 1/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12832497 0.87 EPHX2 (0.50) EPHX2L3MBTL1
SCHEMBL12832312 0.87 EPHX2 (0.56) EPHX2L3MBTL1
SCHEMBL12832311 0.86 EPHX2 (0.49) EPHX2L3MBTL1
SCHEMBL13320026 0.83 LMNA (0.58) EPHX2L3MBTL1
SCHEMBL13320029 0.81 L3MBTL1 (0.58) EPHX2L3MBTL1
SCHEMBL13320019 0.80 L3MBTL1 (0.57) EPHX2L3MBTL1
SCHEMBL533822 0.80 EPHX2 (0.45) EPHX2L3MBTL1
SCHEMBL26661409 0.80 EPHX2 (0.51) EPHX2
SCHEMBL27641283 0.79 EPHX2 (0.43) EPHX2L3MBTL1
SCHEMBL14644904 0.79 EPHX2 (0.57) EPHX2L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2609468-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM Corporation (JP) 2013-07-03 EP disclosed
EP-2521941-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM Corporation (JP) 2012-11-14 EP disclosed
EP-2486452-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM Corporation (JP) 2012-08-15 EP disclosed
WO-2012026622-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-03-01 WO disclosed
EP-2414896-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM Corporation (JP) 2012-02-08 EP disclosed
WO-2012002519-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-01-05 WO disclosed
WO-2011162408-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-12-29 WO disclosed
WO-2011102546-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-08-25 WO disclosed
WO-2011087144-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-21 WO disclosed
WO-2011083872-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-14 WO disclosed
WO-2011043481-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-04-14 WO disclosed
WO-2010114107-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-10-07 WO disclosed
EP-1641849-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS Symyx Technologies, Inc. (US) 2006-04-05 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed