SCHEMBL533822

SCHEMBL533822

CCCCOC(=O)NC12CC3CC(CC(C3)C1C)C2

nearest known ligand 0.45

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 14/20 0.45
MEN1 O00255 3/20 0.43
KMT2A Q03164 3/20 0.43
L3MBTL1 Q9Y468 3/20 0.43
ALDH1A1 P00352 2/20 0.43
MAPT P10636 1/20 0.43
ATM Q13315 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL533667 0.80 EPHX2 (0.62) EPHX2L3MBTL1
SCHEMBL12832497 0.75 EPHX2 (0.50) EPHX2L3MBTL1
SCHEMBL722227 0.73 EPHX2 (0.42) EPHX2MEN1KMT2AL3MBTL1ALDH1A1
SCHEMBL2448804 0.71 MEN1 (0.41) EPHX2MEN1KMT2AL3MBTL1ALDH1A1
SCHEMBL12832312 0.69 EPHX2 (0.56) EPHX2L3MBTL1
SCHEMBL31402514 0.69 MEN1 (0.51) EPHX2MEN1KMT2AL3MBTL1ALDH1A1
SCHEMBL30276605 0.69 NAAA (0.39) EPHX2ALDH1A1ATM
SCHEMBL12832311 0.68 EPHX2 (0.49) EPHX2L3MBTL1
SCHEMBL6452242 0.68 EPHX2 (0.52) EPHX2MEN1KMT2AALDH1A1MAPT
SCHEMBL1566501 0.68 EPHX2 (0.43) EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2013065878-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR CROSSLINKED LAYER FORMATION TO BE USED IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-10 WO disclosed
EP-2521941-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM Corporation (JP) 2012-11-14 EP disclosed
EP-2486452-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM Corporation (JP) 2012-08-15 EP disclosed
EP-2414896-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM Corporation (JP) 2012-02-08 EP disclosed
WO-2012002519-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-01-05 WO disclosed
WO-2011162408-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-12-29 WO disclosed
WO-2011102546-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-08-25 WO disclosed
WO-2011087144-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-21 WO disclosed
WO-2011083872-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-14 WO disclosed
WO-2011043481-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-04-14 WO disclosed
WO-2010114107-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-10-07 WO disclosed