SCHEMBL5369692

SCHEMBL5369692

COc1ccc(S(=O)(=O)ON2C(=O)C=CC2=O)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PKM P14618 3/20 0.50
GAA P10253 2/20 0.50
MGLL Q99685 1/20 0.49
MMP2 P08253 2/20 0.46
NPC1 O15118 1/20 0.46
PKLR P30613 1/20 0.46
RAB9A P51151 1/20 0.46
VDR P11473 1/20 0.45
GSK3A P49840 2/20 0.45
GSK3B P49841 2/20 0.45
EP300 Q09472 1/20 0.44
KAT2A Q92830 1/20 0.44
KAT2B Q92831 1/20 0.44
HTT P42858 2/20 0.44
LMNA P02545 1/20 0.44
SMN1; SMN2 Q16637 1/20 0.44
TDP1 Q9NUW8 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
CA1 P00915 2/20 0.43
CA2 P00918 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL65074 0.83 GAA (0.66) PKMGAAMMP2NPC1PKLR
SCHEMBL5552231 0.82 VDR (0.65) PKMGAAMGLLMMP2RAB9A
SCHEMBL4835021 0.81 GAA (0.49) PKMGAAMMP2NPC1PKLR
SCHEMBL5551953 0.81 VDR (0.55) PKMGAAMMP2NPC1PKLR
SCHEMBL5369841 0.79 VDR (0.74) VDRHTTLMNASMN1; SMN2TDP1
SCHEMBL498754 0.78 PARL (0.67) PKMMGLLRAB9AVDRHTT
SCHEMBL5556047 0.78 NR1H3 (0.49) PKMGAAMMP2NPC1PKLR
SCHEMBL4826503 0.78 GAA (0.49) PKMGAAMMP2NPC1PKLR
SCHEMBL5551764 0.76 GAA (0.51) PKMGAAMMP2NPC1PKLR
SCHEMBL5557977 0.76 KMT2A (0.58) PKMGAAVDRHTTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120044752-A Photosensitive resin composition 东京应化工业株式会社 2025-05-27 CN disclosed
US-20240302743-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2024-09-12 US disclosed
CN-116583784-A Resist composition and resist pattern forming method 东京应化工业株式会社 2023-08-11 CN disclosed
WO-2022138648-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-06-30 WO disclosed
WO-2013141376-A1 PROTECTANT, METHOD FOR PRODUCING COMPOUND PROTECTED BY PROTECTANT, RESIN PROTECTED BY PROTECTANT, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING RESIN PROTECTED BY PROTECTANT, PATTERN-FORMING MATERIAL, PHOTOSENSITIVE FILM, CURED RELIEF PATTERN, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 (JP) 2013-09-26 WO disclosed
WO-2013018524-A1 PHOTOSENSITIVE RESIN COMPOSITION, MATERIAL FOR FORMING RELIEF PATTERN, PHOTOSENSITIVE FILM, POLYIMIDE FILM, CURED RELIEF PATTERN AND METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 (JP) 2013-02-07 WO disclosed
US-8173349-B2 Photosensitive resin composition, polymer compound, method of forming a pattern, and electronic device FUJIFILM CORPORATION (JP) 2012-05-08 US disclosed
US-20100080963-A1 PHOTOSENSITIVE RESIN COMPOSITION, POLYMER COMPOUND, METHOD OF FORMING A PATTERN, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2010-04-01 US disclosed
US-7615324-B2 Photosensitive composition, and cured relief pattern production method and semiconductor device using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-20080227024-A1 PHOTOSENSITIVE COMPOSITION, AND CURED RELIEF PATTERN PRODUCTION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-6693049-B2 FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-02-17 US disclosed
US-6689535-B2 A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM TOKYO OHKA KOGYO CO., LTD (JP) 2004-02-10 US disclosed
US-20030032280-A1 Method for filling fine hole TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-13 US disclosed
US-20020182360-A1 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2002-12-05 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
EP-0848289-B1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2002-02-27 EP disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 US disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 EP disclosed