SCHEMBL5369841

SCHEMBL5369841

COc1ccc(S(=O)(=O)ON2C(=O)c3ccccc3C2=O)cc1

nearest known ligand 0.74

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
VDR P11473 3/20 0.74
KDM4E B2RXH2 10/20 0.71
ALDH1A1 P00352 9/20 0.71
MAPT P10636 9/20 0.71
KMT2A Q03164 8/20 0.71
HPGD P15428 7/20 0.71
MEN1 O00255 5/20 0.69
F2 P00734 4/20 0.67
HTT P42858 4/20 0.56
LMNA P02545 3/20 0.52
SMN1; SMN2 Q16637 3/20 0.52
XBP1 P17861 2/20 0.52
CYP1A2 P05177 1/20 0.52
CYP3A4 P08684 1/20 0.52
CYP2C19 P33261 1/20 0.52
NPSR1 Q6W5P4 1/20 0.52
THRB P10828 1/20 0.52
RECQL P46063 1/20 0.51
CASP3 P42574 1/20 0.48
L3MBTL1 Q9Y468 2/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5557977 0.88 KMT2A (0.58) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL3844039 0.85 VDR (0.55) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL64277 0.85 VDR (1.00) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL29370293 0.85 VDR (1.00) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL5551949 0.84 VDR (0.65) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL5551953 0.84 VDR (0.55) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL64368 0.83 KDM4E (1.00) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL14620101 0.82 VDR (0.67) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL2468373 0.82 KMT2A (1.00) VDRKDM4EALDH1A1MAPTKMT2A
SCHEMBL8778106 0.81 KDM4E (0.76) VDRKDM4EALDH1A1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 67 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240302743-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2024-09-12 US disclosed
US-11760865-B2 Halogen-free sulphonic acid ester and/or sulphinic acid ester as flame retardant, flame retardant synergists and radical generators in plastics Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) 2023-09-19 US disclosed
US-11760865-B2 Halogen-free sulphonic acid ester and/or sulphinic acid ester as flame retardant, flame retardant synergists and radical generators in plastics Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) 2023-09-19 US disclosed
CN-112987497-A Resist composition and resist pattern forming method 东京应化工业株式会社 2021-06-18 CN disclosed
US-20200231783-A1 HALOGEN-FREE SULPHONIC ACID ESTER AND/OR SULPHINIC ACID ESTER AS FLAME RETARDANT, FLAME RETARDANT SYNERGISTS AND RADICAL GENERATORS IN PLASTICS Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. (DE) 2020-07-23 US disclosed
EP-2278399-B1 Positive-working resist composition FUJIFILM CORP (JP) 2013-05-15 EP disclosed
EP-1341038-B1 Photosensitive resin composition FUJIFILM CORP (JP) 2012-10-24 EP disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
EP-1179750-B1 Positive photosensitive composition and method for producing a precision integrated circuit element using the same FUJIFILM CORP (JP) 2012-07-25 EP disclosed
EP-0848289-B1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2002-02-27 EP disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 US disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 EP disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
EP-0058638-B1 CURABLE COMPOSITIONS CONTAINING AN ACID-CURABLE RESIN, AND PROCESS FOR CURING THEM CIBA-GEIGY AG (CH) 1985-08-28 EP disclosed
EP-0058638-A2 Curable compositions containing an acid-curable resin, and process for curing them CIBA-GEIGY AG (CH) 1982-08-25 EP disclosed