SCHEMBL5386328

SCHEMBL5386328

CCC(=O)OCCOC.CCOCCOC(=O)CC

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.54
ALDH1A1 P00352 3/20 0.54
THRB P10828 1/20 0.47
NAAA Q02083 1/20 0.45
DGKA P23743 1/20 0.36
HSD17B10 Q99714 1/20 0.36
GAA P10253 3/20 0.36
ABCB11 O95342 1/20 0.35
CYP3A4 P08684 1/20 0.35
ADRA2B P18089 1/20 0.35
OPRD1 P41143 1/20 0.35
SCN5A Q14524 1/20 0.35
MGAM O43451 1/20 0.34
SI P14410 1/20 0.34
MGAM2 Q2M2H8 1/20 0.34
SOAT1 P35610 1/20 0.34
HTT P42858 1/20 0.34
THRA P10827 1/20 0.34
RAB9A P51151 1/20 0.34
EPHX2 P34913 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL181549 0.91 NAAA (0.48) TSHRALDH1A1THRBNAAADGKA
SCHEMBL27095803 0.91 NAAA (0.48) TSHRALDH1A1THRBNAAADGKA
SCHEMBL5412253 0.91 NAAA (0.48) TSHRALDH1A1THRBNAAADGKA
SCHEMBL29308968 0.91 NAAA (0.48) TSHRALDH1A1THRBNAAADGKA
SCHEMBL106760 0.91 ALDH1A1 (0.62) TSHRALDH1A1THRBNAAADGKA
SCHEMBL5411907 0.89 ALDH1A1 (0.60) TSHRALDH1A1THRBNAAADGKA
SCHEMBL181390 0.89 ALDH1A1 (0.60) TSHRALDH1A1THRBNAAADGKA
SCHEMBL181426 0.89
Ethylene SCHEMBL27869580 0.88 NAAA (0.45) TSHRALDH1A1THRBNAAADGKA
Hydrochloric Acid SCHEMBL29367851 0.87 NAAA (0.52) TSHRALDH1A1NAAADGKAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205030-B2 Method for forming porous film SANYO ELECTRIC CO., LTD. (JP) 2007-04-17 US disclosed
US-20040213911-A1 Method for forming porous film SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-10-28 US disclosed