SCHEMBL5400570

SCHEMBL5400570

CO[Si](CC1=CCCC1)(OC)OC

nearest known ligand 0.37

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.37
RAB9A P51151 3/20 0.37
ALOX15 P16050 2/20 0.33
SMN1; SMN2 Q16637 3/20 0.31
NPC1 O15118 2/20 0.31
CDK1 P06493 1/20 0.31
CCNB1 P14635 1/20 0.31
MGMT P16455 1/20 0.31
CCNA2 P20248 1/20 0.31
CDK2 P24941 1/20 0.31
CCNA1 P78396 1/20 0.31
CXCR3 P49682 1/20 0.31
MAPT P10636 1/20 0.30
HTT P42858 1/20 0.30
HSD17B10 Q99714 1/20 0.30
GAA P10253 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412136 0.94 ALDH1A1 (0.43) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1
SCHEMBL5398213 0.80 ALDH1A1 (0.33) ALDH1A1RAB9AALOX15CDK1CCNB1
SCHEMBL107773 0.75 ALDH1A1 (0.51) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1
SCHEMBL5408284 0.75 ALDH1A1 (0.38) ALDH1A1RAB9AALOX15SMN1; SMN2CXCR3
SCHEMBL1145336 0.71
SCHEMBL8827371 0.71 ALDH1A1 (0.38) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1
SCHEMBL6294503 0.70 ALDH1A1 (0.42) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1
SCHEMBL542981 0.67
SCHEMBL8677978 0.66 ALDH1A1 (0.44) ALDH1A1RAB9AALOX15SMN1; SMN2CDK1
SCHEMBL7690640 0.66 ALDH1A1 (0.45) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed