SCHEMBL5412136

SCHEMBL5412136

CO[Si](CC1=CCCCC1)(OC)OC

nearest known ligand 0.43

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 8/20 0.43
RAB9A P51151 4/20 0.43
ALOX15 P16050 2/20 0.39
CXCR3 P49682 2/20 0.37
SMN1; SMN2 Q16637 3/20 0.36
NPC1 O15118 2/20 0.36
PKM P14618 1/20 0.35
MAPT P10636 1/20 0.35
HTT P42858 1/20 0.35
HSD17B10 Q99714 1/20 0.35
GAA P10253 1/20 0.35
KDM4E B2RXH2 1/20 0.33
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5400570 0.94 ALDH1A1 (0.37) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL107773 0.81 ALDH1A1 (0.51) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1
SCHEMBL5408284 0.81 ALDH1A1 (0.38) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL6294503 0.77 ALDH1A1 (0.42) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL8827371 0.77 ALDH1A1 (0.38) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL5398213 0.74 ALDH1A1 (0.33) ALDH1A1RAB9AALOX15
SCHEMBL1050390 0.72
SCHEMBL10526981 0.72 ALDH1A1 (0.39) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL8767542 0.72 ALDH1A1 (0.47) ALDH1A1RAB9AALOX15SMN1; SMN2NPC1
SCHEMBL1054489 0.71 CXCR3 (0.42) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed