SCHEMBL5408284

SCHEMBL5408284

CCO[Si](CC1=CCCCC1)(OCC)OCC

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.38
RAB9A P51151 2/20 0.38
ALOX15 P16050 2/20 0.37
CXCR3 P49682 2/20 0.35
SMN1; SMN2 Q16637 3/20 0.34
GAA P10253 1/20 0.34
KMT2A Q03164 1/20 0.34
PKM P14618 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
RECQL P46063 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
LMNA P02545 1/20 0.32
HPGD P15428 1/20 0.32
ALOX12 P18054 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5398213 0.94 ALDH1A1 (0.33) ALDH1A1RAB9AALOX15
SCHEMBL107686 0.82 ALDH1A1 (0.42) ALDH1A1RAB9AALOX15SMN1; SMN2GAA
SCHEMBL5412136 0.81 ALDH1A1 (0.43) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL8087908 0.78 ALDH1A1 (0.40) ALDH1A1RAB9AALOX15SMN1; SMN2GAA
SCHEMBL5400570 0.75 ALDH1A1 (0.37) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL6294503 0.74 ALDH1A1 (0.42) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL3893404 0.74 ALDH1A1 (0.41) ALDH1A1RAB9AALOX15SMN1; SMN2GAA
SCHEMBL3886793 0.74 ALDH1A1 (0.41) ALDH1A1RAB9AALOX15SMN1; SMN2GAA
SCHEMBL10526981 0.73 ALDH1A1 (0.39) ALDH1A1RAB9AALOX15CXCR3SMN1; SMN2
SCHEMBL4325254 0.73 JAK2 (0.34) ALDH1A1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed