Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 5/20 | 0.48 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.45 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.39 |
| ▸ | EPHX2 | P34913 | 4/20 | 0.35 |
| ▸ | P2RX7 | Q99572 | 1/20 | 0.35 |
| ▸ | CNR2 | P34972 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4784526 | 0.84 | HSD17B10 (0.48) | HSD11B1CYP2C9L3MBTL1HSD17B10EPHX2 | |
| SCHEMBL160953 | 0.79 | HSD11B1 (0.48) | HSD11B1CYP2C9L3MBTL1HSD17B10 | |
| SCHEMBL27284428 | 0.79 | HSD11B1 (0.52) | HSD11B1CYP2C9L3MBTL1HSD17B10EPHX2 | |
| SCHEMBL19859959 | 0.79 | HSD11B1 (0.48) | HSD11B1CYP2C9L3MBTL1HSD17B10 | |
| SCHEMBL16698251 | 0.79 | HSD11B1 (0.48) | HSD11B1CYP2C9L3MBTL1HSD17B10 | |
| SCHEMBL2181379 | 0.79 | HSD11B1 (0.46) | HSD11B1CYP2C9L3MBTL1HSD17B10EPHX2 | |
| SCHEMBL177210 | 0.77 | HSD11B1 (0.45) | HSD11B1CYP2C9L3MBTL1HSD17B10EPHX2 | |
| Hydrochloric Acid SCHEMBL3051989 | 0.77 | HSD11B1 (0.46) | HSD11B1CYP2C9L3MBTL1HSD17B10 | |
| SCHEMBL31349739 | 0.77 | HSD11B1 (0.46) | HSD11B1CYP2C9L3MBTL1HSD17B10 | |
| SCHEMBL813578 | 0.77 | HSD11B1 (0.45) | HSD11B1CYP2C9L3MBTL1HSD17B10EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7119156-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-10-10 | — | — | US | disclosed |
| US-7070905-B2 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-07-04 | — | — | US | disclosed |
| US-7063932-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-06-20 | — | — | US | disclosed |
| US-7029823-B2 | Resist composition | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-04-18 | — | — | US | disclosed |
| US-20050048400-A1 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-03-03 | — | — | US | disclosed |
| US-20050037283-A1 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-17 | — | — | US | disclosed |
| US-20050037284-A1 | Polymer; radiation transparent pattern against short wavelengths and etching resistance; semiconductors | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-17 | — | — | US | disclosed |
| US-20050031990-A1 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-10 | — | — | US | disclosed |
| US-20050031991-A1 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-10 | — | — | US | disclosed |
| US-6824957-B2 | RESIST COMPOSITION HAVING HIGH TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND HIGH DRY- ETCHING RESISTANCE, CAPABLE OF FORMING A RESIST PATTERN EXCELLENT IN ADHESION AND RESOLUTION BY MEANS OF ALKALI DEVELOPMENT | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-11-30 | — | — | US | disclosed |
| CN-1156435-C | 2-alkyl-2-adamantane radical 5-norbornene-2-carboxylic ether and its producing process | 株式会社化研 | 2004-07-07 | — | — | CN | disclosed |
| US-20040043324-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-03-04 | — | — | US | disclosed |
| US-6660450-B2 | Acrylic ester polymer having pendant adamantane rings with oxygenated substitution; ultraviolet light transparency; dry etching resistance | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-12-09 | — | — | US | disclosed |
| US-20030149225-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-08-07 | — | — | US | disclosed |
| US-6541597-B2 | Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20020098441-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-07-25 | — | — | US | disclosed |
| US-6303266-B1 | FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-10-16 | — | — | US | disclosed |
| CN-1310167-A | 2-alkyl-2-adamantane radical 5-norbornene-2-carboxylic ether and its producing process | HWAYUN CO LTD (KR) | 2001-08-29 | — | — | CN | disclosed |
| CN-1304398-A | Process for preparation of nitro compound and method for removal of nitrogen dioxide | DAICEL CHEM (JP) | 2001-07-18 | — | — | CN | disclosed |