Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 8/20 | 0.49 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.43 |
| ▸ | FLT1 | P17948 | 1/20 | 0.43 |
| ▸ | FLT4 | P35916 | 1/20 | 0.43 |
| ▸ | KDR | P35968 | 1/20 | 0.43 |
| ▸ | HSD17B2 | P37059 | 2/20 | 0.41 |
| ▸ | NR1I2 | O75469 | 5/20 | 0.40 |
| ▸ | CCR9 | P51686 | 1/20 | 0.40 |
| ▸ | HSD17B3 | P37058 | 1/20 | 0.39 |
| ▸ | FBP1 | P09467 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL561670 | 0.89 | KDM4E (0.48) | KDM4EFLT1FLT4KDRMEN1 | |
| SCHEMBL3159089 | 0.87 | KDM4E (0.45) | KDM4EFLT1FLT4KDRKMT2A | |
| SCHEMBL5408753 | 0.87 | KDM4E (0.45) | KDM4EFLT1FLT4KDRKMT2A | |
| SCHEMBL5400315 | 0.87 | HSD11B1 (0.48) | HSD11B1FLT1FLT4KDRHSD17B2 | |
| SCHEMBL5404426 | 0.84 | KDM4E (0.42) | KDM4E | |
| SCHEMBL451539 | 0.80 | HSD11B1 (0.53) | HSD11B1KDM4EHSD17B2HSD17B3MEN1 | |
| SCHEMBL2634260 | 0.80 | HSD11B1 (0.53) | HSD11B1KDM4EHSD17B2HSD17B3MEN1 | |
| SCHEMBL5408918 | 0.79 | KDM4E (0.42) | KDM4EMEN1KMT2A | |
| SCHEMBL5412319 | 0.78 | KDM4E (0.41) | HSD11B1KDM4EFBP1MEN1KMT2A | |
| SCHEMBL3195800 | 0.77 | HSD11B1 (0.42) | HSD11B1NR1I2HSD17B3MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-6949329-B2 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-09-27 | — | — | US | disclosed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | disclosed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | disclosed |
| US-20030017425-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-01-23 | — | — | US | disclosed |