SCHEMBL5408918

SCHEMBL5408918

Cc1cc(C)c(S(OS(=O)(=O)c2cc(Cl)ccc2Cl)(c2ccccc2)c2ccccc2)c(C)c1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.42
L3MBTL1 Q9Y468 3/20 0.38
NPSR1 Q6W5P4 2/20 0.38
ALPL P05186 2/20 0.38
ALPI P09923 1/20 0.38
HPGD P15428 1/20 0.38
FFAR4 Q5NUL3 2/20 0.38
HTT P42858 2/20 0.36
ALDH1A1 P00352 2/20 0.36
ALDH3A1 P30838 1/20 0.36
LMNA P02545 1/20 0.36
MAPT P10636 1/20 0.36
TDP1 Q9NUW8 1/20 0.35
PTGDR2 Q9Y5Y4 1/20 0.35
CDK1 P06493 1/20 0.35
CCNB1 P14635 1/20 0.35
CCNA2 P20248 1/20 0.35
CDK2 P24941 1/20 0.35
CDK7 P50613 1/20 0.35
CCNH P51946 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5398449 0.87 FFAR4 (0.39) L3MBTL1NPSR1ALPLALPIFFAR4
SCHEMBL5412319 0.86 KDM4E (0.41) KDM4EL3MBTL1ALPLALPIHPGD
SCHEMBL3159089 0.86 KDM4E (0.45) KDM4EL3MBTL1ALPLALPIHTT
SCHEMBL5408753 0.86 KDM4E (0.45) KDM4EL3MBTL1ALPLALPIHTT
SCHEMBL561670 0.85 KDM4E (0.48) KDM4EL3MBTL1HPGDALDH1A1TDP1
SCHEMBL6282646 0.84 FFAR4 (0.46) KDM4EL3MBTL1NPSR1HPGDFFAR4
SCHEMBL58786 0.81 FFAR4 (0.47) KDM4EL3MBTL1NPSR1HPGDFFAR4
SCHEMBL5403701 0.79 HSD11B1 (0.49) KDM4EMEN1KMT2A
SCHEMBL5404426 0.78 KDM4E (0.42) KDM4EL3MBTL1HPGDHTTALDH1A1
SCHEMBL548240 0.78 FFAR4 (0.38) KDM4EL3MBTL1FFAR4ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed