SCHEMBL5404850

SCHEMBL5404850

Cc1ccc(S(OS(=O)(=O)c2cc([N+](=O)[O-])cc([N+](=O)[O-])c2)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 6/20 0.43
GAA P10253 1/20 0.43
HTT P42858 1/20 0.43
ACHE P22303 2/20 0.42
HSD17B10 Q99714 1/20 0.42
CYP19A1 P11511 1/20 0.41
CA2 P00918 1/20 0.41
CA5A P35218 1/20 0.41
BCHE P06276 1/20 0.41
KDM4E B2RXH2 1/20 0.41
ALDH1A1 P00352 1/20 0.41
F2 P00734 2/20 0.40
PRSS1 P07477 2/20 0.40
PRSS2 P07478 2/20 0.40
PRSS3 P35030 2/20 0.40
CYP1A2 P05177 1/20 0.40
CYP3A4 P08684 1/20 0.40
CYP2C19 P33261 1/20 0.40
MEN1 O00255 3/20 0.40
HPGD P15428 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412248 0.90 KMT2A (0.53) KMT2AGAAHTTACHECA2
SCHEMBL5408843 0.90 POLB (0.41) KMT2AGAAHTTACHECYP19A1
SCHEMBL5408586 0.87 GAA (0.39) KMT2AGAAHTTACHECA2
SCHEMBL5409063 0.85 KMT2A (0.40) KMT2AGAAHTTCA2CA5A
SCHEMBL5408956 0.84 KMT2A (0.46) KMT2AGAAHTTACHECA2
SCHEMBL64190 0.82 VDR (0.49) KMT2AGAAHTTACHECA2
SCHEMBL2955938 0.82 VDR (0.49) KMT2AGAAHTTACHECA2
SCHEMBL2964106 0.82 VDR (0.49) KMT2AGAAHTTACHECA2
SCHEMBL3144536 0.82 VDR (0.49) KMT2AGAAHTTACHECA2
SCHEMBL2962485 0.82 VDR (0.49) KMT2AGAAHTTACHECA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed