Known targets — ChEMBL curated mechanism
GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHMGCRMMP1MMP13MMP7MMP8PTGS1PTGS2ileSpolrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6887612 | 0.87 | — | — | |
| SCHEMBL17361210 | 0.87 | — | — | |
| SCHEMBL3374551 | 0.87 | — | — | |
| SCHEMBL2181238 | 0.87 | — | — | |
| SCHEMBL8663059 | 0.82 | — | — | |
| SCHEMBL5067686 | 0.82 | — | — | |
| SCHEMBL139857 | 0.82 | — | — | |
| SCHEMBL11674077 | 0.82 | — | — | |
| SCHEMBL21802721 | 0.82 | KDM3A (0.50) | — | |
| SCHEMBL10576947 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12635394-B2 | Display device | SHARP KABUSHIKI KAISHA (JP) | 2026-05-19 | — | — | US | claimed |
| US-20230189620-A1 | DISPLAY DEVICE | SHARP KABUSHIKI KAISHA (JP) | 2023-06-15 | — | — | US | claimed |
| WO-2022030005-A1 | DISPLAY DEVICE | シャープ株式会社 | 2022-02-10 | — | — | WO | claimed |
| US-20090035877-A1 | METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. | 2009-02-05 | — | — | US | claimed |
| US-12635394-B2 | Display device | SHARP KABUSHIKI KAISHA (JP) | 2026-05-19 | — | — | US | disclosed |
| US-20230189620-A1 | DISPLAY DEVICE | SHARP KABUSHIKI KAISHA (JP) | 2023-06-15 | — | — | US | disclosed |
| WO-2022030005-A1 | DISPLAY DEVICE | シャープ株式会社 | 2022-02-10 | — | — | WO | disclosed |
| EP-1736438-B1 | Use of complex metal oxides in the autothermal generation of hydrogen | UNIV SOUTH CAROLINA (US) | 2012-02-08 | — | — | EP | disclosed |
| US-7811834-B2 | Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-10-12 | — | — | US | disclosed |
| US-20090321803-A1 | Semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-12-31 | — | — | US | disclosed |
| US-7585683-B2 | Methods of fabricating ferroelectric devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-09-08 | — | — | US | disclosed |
| US-20090035877-A1 | METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. | 2009-02-05 | — | — | US | disclosed |
| US-7438889-B2 | Use of complex metal oxides in the autothermal generation of hydrogen | UNIVERSITY OF SOUTH CAROLINA (US) | 2008-10-21 | — | — | US | disclosed |
| US-20080020489-A1 | METHODS OF FABRICATING FERROELECTRIC DEVICES | SAMSUNG ELECTRONICS CO., LTD. | 2008-01-24 | — | — | US | disclosed |
| US-20060292066-A1 | Use of complex metal oxides in the autothermal generation of hydrogen | UNIVERSITY OF SOUTH CAROLINA | 2006-12-28 | — | — | US | disclosed |
| EP-1736438-A2 | Use of complex metal oxides in the autothermal generation of hydrogen | UNIVERSITY OF SOUTH CAROLINA (US) | 2006-12-27 | — | — | EP | disclosed |