SCHEMBL5408447

SCHEMBL5408447

Cc1ccc([S+](c2ccccc2)c2ccccc2)c(C)c1.O=S(=O)([O-])c1cc(C(F)(F)F)cc(C(F)(F)F)c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR1 O14842 1/20 0.39
CDK1 P06493 1/20 0.39
CCNB1 P14635 1/20 0.39
CCNA2 P20248 1/20 0.39
CDK2 P24941 1/20 0.39
CDK7 P50613 1/20 0.39
CCNH P51946 1/20 0.39
CCNA1 P78396 1/20 0.39
FFAR4 Q5NUL3 1/20 0.39
MAPT P10636 3/20 0.38
CYP1A2 P05177 2/20 0.38
CYP3A4 P08684 2/20 0.38
CYP2C19 P33261 2/20 0.38
MAPK1 P28482 1/20 0.38
MCL1 Q07820 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
MEN1 O00255 4/20 0.34
KMT2A Q03164 4/20 0.34
CYP2D6 P10635 1/20 0.34
TSHR P16473 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5403808 0.92 FFAR4 (0.43) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL3201709 0.91 FFAR1 (0.40) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL3201110 0.87 CYP1A2 (0.39) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL5405418 0.86 FFAR1 (0.46) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL5409164 0.86 FFAR1 (0.46) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL5405540 0.85 MAPT (0.40) FFAR1CDK1CCNB1CCNA2CDK2
Trifluoromethanesulfonic Acid SCHEMBL4857072 0.84 GPR3 (0.47) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL4861374 0.84 RAPGEF4 (0.40) FFAR4MAPTCYP1A2CYP3A4CYP2C19
SCHEMBL3203586 0.84 MCL1 (0.42) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL3191926 0.83 CYP1A2 (0.36) FFAR1CDK1CCNB1CCNA2CDK2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed