SCHEMBL5408450

SCHEMBL5408450

Cc1ccc(S(OS(=O)(=O)c2cc(C(F)(F)F)cc(C(F)(F)F)c2)(c2ccccc2)c2ccccc2)c(C)c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MCL1 Q07820 1/20 0.41
ALDH1A1 P00352 4/20 0.40
MAPT P10636 3/20 0.40
KDM4E B2RXH2 1/20 0.40
F2 P00734 1/20 0.40
HPGD P15428 2/20 0.39
POLB P06746 1/20 0.39
ALOX12 P18054 1/20 0.39
GFER P55789 1/20 0.39
ABCC9 O60706 1/20 0.37
ABCC8 Q09428 1/20 0.37
KCNJ11 Q14654 1/20 0.37
KCNJ8 Q15842 1/20 0.37
EPHX2 P34913 2/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
HSD17B10 Q99714 1/20 0.36
LMNA P02545 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
MCOLN3 Q8TDD5 1/20 0.35
HSD11B1 P28845 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5403814 0.93 MCL1 (0.42) MCL1ALDH1A1MAPTKDM4EF2
SCHEMBL3201722 0.91 MCL1 (0.43) MCL1ALDH1A1MAPTKDM4EF2
SCHEMBL3201120 0.88 MCL1 (0.38) MCL1ALDH1A1MAPTKDM4EF2
SCHEMBL5410201 0.87 FFAR1 (0.43) ALDH1A1MAPTKDM4EPOLBALOX12
SCHEMBL5405422 0.87 FFAR1 (0.43) ALDH1A1MAPTKDM4EPOLBALOX12
SCHEMBL5405543 0.86 MAPT (0.42) ALDH1A1MAPTKDM4EL3MBTL1LMNA
SCHEMBL3203596 0.86 MCL1 (0.43) MCL1ALDH1A1MAPTKDM4EF2
SCHEMBL3191940 0.85 ALDH1A1 (0.40) MCL1ALDH1A1MAPTKDM4EF2
SCHEMBL4861379 0.84 ALDH1A1 (0.48) ALDH1A1MAPTKDM4EF2HPGD
SCHEMBL5410161 0.84 MAPT (0.46) ALDH1A1MAPTKDM4EL3MBTL1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed