SCHEMBL5408714

SCHEMBL5408714

CCCCc1ccc([S+](c2ccccc2)c2ccccc2)cc1.O=S(=O)([O-])c1cccc(C(F)(F)F)c1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TRPV1 Q8NER1 1/20 0.49
LMNA P02545 1/20 0.42
CA2 P00918 2/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
POLB P06746 1/20 0.40
CNR2 P34972 1/20 0.40
TP53 P04637 1/20 0.39
CYP1A2 P05177 1/20 0.39
CYP3A4 P08684 1/20 0.39
CYP2D6 P10635 1/20 0.39
TSHR P16473 1/20 0.39
CYP2C19 P33261 1/20 0.39
SIGMAR1 Q99720 1/20 0.39
CA1 P00915 1/20 0.39
MMP1 P03956 1/20 0.39
MMP2 P08253 1/20 0.39
MMP9 P14780 1/20 0.39
MMP8 P22894 1/20 0.39
MMP13 P45452 1/20 0.39
PDPK1 O15530 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5410115 0.93 TRPV1 (0.43) TRPV1LMNACA2POLBCNR2
SCHEMBL6282698 0.88 POLB (0.43) TRPV1LMNACA2POLBCYP3A4
SCHEMBL5400958 0.84 CA1 (0.51) CA2POLBTSHRCA1MMP1
SCHEMBL5414606 0.83 NPSR1 (0.42) CA2POLBCYP3A4CYP2C19CA1
SCHEMBL2960150 0.83 CA2 (0.54) TRPV1LMNACA2SMN1; SMN2CNR2
SCHEMBL5400807 0.82 FFAR1 (0.51) LMNACA2POLBTP53CA1
SCHEMBL5408432 0.82 FFAR1 (0.51) LMNACA2POLBTP53CA1
SCHEMBL5415242 0.81 CA1 (0.43) CA2CYP3A4CYP2D6CYP2C19CA1
SCHEMBL5412451 0.80 L3MBTL1 (0.39) TRPV1CA2POLBCA1MMP1
SCHEMBL5403631 0.80 NPSR1 (0.44) TRPV1LMNACA2SMN1; SMN2POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed